Some characteristics of heavily Be-doped GaAs layers grown by molecular beam epitaxy

Zhang, D.H.; Radhakrishnan, K.; Yoon, Soon Fatt; Li, H.M.; Lek, A.W.; Lau, E.H.

doi:10.1016/0040-6090(93)90229-i

Cited by 6 publications

(2 citation statements)

References 14 publications

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“…3, consisted of modifications to the nominal doping levels to optimize the metamorphic TJs. One TJ was grown with n-and p-type doping levels of 2×10 19 and 6×10 19 cm -3 , respectively (GaAsP-B), to test the capability of achieving higher p-type doping levels, given the lack of Be amphoteric behavior as reported in the literature, [7] and the other grown with n-and p-type doping levels of 1×10 19 and 6×10 19 cm -3 (GaAsP-C), respectively, to ascertain whether the n-type material was experiencing amphoteric behavior.…”

Section: Tunnel Junction Characterizationmentioning

confidence: 99%

Metamorphic tunnel junctions for high efficiency III-V/IV multi-junction solar cell technology

Chmielewski

Grassman

Carlin

et al. 2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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Through band gap engineering, metamorphic GaInP/GaAsP/Si multi-junction solar cells are theoretically capable of achieving a substantial increase in efficiency, with a significant decrease in cost, compared to current state-of-the-art Ge-based multi-junction solar cells. While the refinement of the necessary metamorphic materials and development of the associated sub-cells are obvious areas of focus, such devices also require high-performance tunnel junctions to minimize both optical and electrical sub-cell interconnection losses. Here we discuss efforts toward the development of these important component devices, including metamorphic materials growth and analysis, leading to the successful demonstration of metamorphic GaAs 0.9 P 0.1 tunnel junctions with peak current densities exceeding 100 A/cm 2 and zero-bias resistance-area products of 4.5×10 -4 Ω•cm 2 , indicating high-quality devices capable for use in future high-concentration GaInP/GaAsP/Si multi-junction devices.

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Section: Tunnel Junction Characterizationmentioning

confidence: 99%

Metamorphic tunnel junctions for high efficiency III-V/IV multi-junction solar cell technology

Chmielewski

Grassman

Carlin

et al. 2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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“…While Si is an excellent n-type dopant for all III–V compounds, several drawbacks remain for p-type doping. Be presents a near-unity sticking coefficient and low vapor pressure at the usual growth conditions used in molecular beam epitaxy (MBE). − However, diffusion and incorporation of Be at interstitial sites have limited doping levels above mid-10 19 cm –3 . At elevated concentrations, relevant lattices distortions are created because the covalent radius of Be is much shorter than those of both As and Ga atoms.…”

Section: Introductionmentioning

confidence: 99%

Mg-Doping of (111)B GaAs Thin Films Grown by Molecular Beam Epitaxy

et al. 2019

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In this work, the influence of the growth conditions in the incorporation of Mg p-type dopant atoms in epitaxial GaAs(100) and (111)B thin films was investigated. Hall effect measurements and photoluminescence spectroscopy were used to investigate the electrical and optical properties of the films, respectively. The doping level varied between 1016 and 1019 cm–3 and increased with the inverse of the growth temperature and with the temperature of the Mg evaporation cell, with similar behavior in both crystal orientations. The analysis of the Mg incorporation at several growth temperatures and Mg arrival rates established a value of E d (111)B = 1.6 ± 0.1 eV for the thermal desorption activation energy of Mg in the GaAs(111)B, a value 33% higher than for the (100) case. However, when a more realistic incomplete ionization model for the acceptors is considered, the value of the thermal activation energy for desorption of Mg adatoms increases to 2.7 ± 0.8 eV and equals the value for the (100) surface. Two very close broad bands were observed in the PL emission of the samples: free electron-to-Mg acceptor level (e–A) transition, at approximately 1.49 eV, and the donor-to-Mg acceptor (D–A) transition, at approximately 1.48 eV. However, a relative small red shift and broadening of these optical transitions for the (111)B samples suggest that this orientation is less susceptible to many-body interaction as the doping level increases, and Mg acceptors get close enough to interact. The small increase of the full width at half-maximum with the doping level for both transitions also indicates that the crystalline quality of the GaAs(111)B thin films was not severely perturbed by the high doping levels studied in this work.

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Characterization of beryllium-doped molecular beam epitaxial grown GaAs by photoluminescence

Zhang

Radhakrishnan

Yoon

1995

Journal of Crystal Growth

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Some characteristics of heavily Be-doped GaAs layers grown by molecular beam epitaxy

Cited by 6 publications

References 14 publications

Metamorphic tunnel junctions for high efficiency III-V/IV multi-junction solar cell technology

Metamorphic tunnel junctions for high efficiency III-V/IV multi-junction solar cell technology

Mg-Doping of (111)B GaAs Thin Films Grown by Molecular Beam Epitaxy

Characterization of beryllium-doped molecular beam epitaxial grown GaAs by photoluminescence

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