Some aspects of anodic passivity of silicon single crystals

Anodic Polarization of Silicon Wafers in Alkaline Solutions

“…Thickness of the anodic oxide film depends on the applied potential. Oxide thickness increases continuously up to a certain potential, beyond which the film becomes unstable along with onset of oxygen evolution [1,4,10,11]. Current runaway occurred at the onset of oxygen evolution, which is attributed to breakdown of the oxide film [4,11].…”