Solvothermal Synthesis of Lateral Heterojunction Sb₂Te₃/Bi₂Te₃ Nanoplates

Abstract

A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. The semiconducting temperature-resistance curve and crossjunction rectification were observed, which reveal a staggered-gap lateral heterojunction with a small junction voltage. Quantum correction from the weak antilocalization reveals the well-maintained transport of the topological surface state. This is appealing for a platform for spin filters and one-dimensional topological interface states.

In-plane topological p-n junction in the three-dimensional topological insulator Bi2−xSbxTe3−ySey

“…As for the comparison with previous report of the vertical and the in-plane TPNJ device19202122, we did not observe the threshold-like abrupt increase of the drain current in the present drain voltage ( V D ) range between −30 mV and 30 mV (ref. 22).…”

“…22). Importantly, no clear difference was experimentally observed between positive and negative V D , indicating that the switching of current based on the TPNJ scenario is robust for the V D range of the present experiments2022.…”

“…22). Importantly, no clear difference was experimentally observed between positive and negative V D , indicating that the switching of current based on the TPNJ scenario is robust for the V D range of the present experiments2022. On the other hand, in the present device, the resistance jump at TPNJ was suppressed at 300 K (∼26 meV) and the potential drop at TPNJ was smaller than that of the gradient induced TPNJ in the Bi 2 Te 3 single crystal21.…”

“…Such TPNJ studies were recently made for graphene151617, where pseudo-spin locking is realized via its special geometrical structure and inversion symmetry. Although intensive challenges for fabrication and observation of TPNJs have so far been made also for 3D-TIs as a real spin-locked system1819202122, the important backward scattering and its on–off switching of charge current flow originating from the spin-locked helical Dirac cone surface states have not yet experimentally been reported. Considering the novel electric transport for TPNJ as well as its applications to 3D-TI devices by using ultralow dissipative spin and charge current, truly firm confirmation and understanding on TPNJ fabricated on the in-plane surface of 3D-TIs are very much warranted.…”

Unexpected orbital magnetism in Bi-rich Bi2Se3 nanoplatelets

“…The reaction product was isolated via centrifugation, washed thoroughly with high-purity ethanol and allowed to dry in air. A similar method was used by Fei et al 27 Crystallographic characterization was performed on the Bi 2 Se 3 nanoplatelets by powder X-ray diffraction (XRD) using a Siemens D500 (SIMENS AG, Karlsruhe, Germany) diffractometer with Cu Kα radiation (λ = 1.5418 Å). Accurate Rietveld analysis of the XRD patterns of the three samples was shown to be unrealistic.…”