Understanding
the condensation of the dimeric thiostannate(IV)
[Sn2S6]4– to SnS2 is of key importance for the development of solution processing
of advanced tin(IV) sulfide based electronic devices such as photovoltaics
(e.g., Cu2ZnSnS4, CZTSSe) and thin-film transistors.
Here, we report the crystal structure of tetraammonium thiostannate(IV)
trihydrate ((NH4)4Sn2S6·3H2O), which can be used as a more environmentally
friendly alternative to the hydrazinium analogue in solution processed
advanced tin(IV) sulfide based electronic devices, e.g., CZTSSe. Hirshfeld
surface analysis shows that crystal bound water molecules play a significant
role in the structure and interact strongly with the sulfur atoms
in the dimeric thiostannate(IV) complex [Sn2S6]4–. The thermal decomposition and corresponding
condensation of ((NH4)4Sn2S6·3H2O) to SnS2 have been studied by TG/DSC-MS
and solid-state 119Sn MAS NMR. It involves the formation
of the relatively more condensed thiostannate(IV) complex [Sn4S10]4– at 90 °C via evaporation
of ammonia, hydrogen sulfide, and water from the structure. With increasing
temperature, more tin is transformed from tetrahedral to octahedral
coordination, and at 220 °C, crystalline SnS2 is formed.
In an aqueous ammonium sulfide based solution, the structure of dimeric
[Sn2S6]4– is retained, and
aqueous solutions of (NH4)4Sn2S6·3H2O can be spin coated and thermally decomposed
to form crystalline SnS2 thin films. X-ray scattering techniques
show that the solution processed SnS2 thin film is highly
textured with the ab plane parallel to the substrate.
Furthermore, AFM and TEM reveal that the thin film is continuous and
with an inherent porous surface structure from the gaseous formation
byproducts.