Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

Thomas, Luc; Jan, Guenole; Le, S.; Lee, Yuan-Jen; Liu, Huanlong; Zhu, Jianguo; Serrano-Guisan, S.; Tong, Ru-Ying; Pi, K.; Shen, Dongna; He, Renren; Haq, Jesmin; Teng, Zhongjian; Annapragada, Rao; Lam, Vinh; Wang, Yu-Jen; Zhong, Tom; Torng, Terry; Wang, Po-Kang

doi:10.1109/iedm.2015.7409773

Cited by 37 publications

(24 citation statements)

References 5 publications

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“…Thus far, STT-MRAM devices are larger than this scale. Recent experiments on large arrays of very uniform magnetic bits have found that the energy barrier (for fixed element thickness) scales with the element diameter (not the diameter squared) [146], consistent with the predictions of a recent micromagnetic model [144] and the reversal mode pictured in figure 19(b).…”

Section: Department Of Physics New York Universitysupporting

confidence: 58%

The 2017 Magnetism Roadmap

Sander

Valenzuela

Makarov

et al. 2017

J. Phys. D: Appl. Phys.

320

207

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Building upon the success and relevance of the 2014 Magnetism Roadmap, this 2017 Magnetism Roadmap edition follows a similar general layout, even if its focus is naturally shifted, and a different group of experts and, thus, viewpoints are being collected and presented. More importantly, key developments have changed the research landscape in very relevant ways, so that a novel view onto some of the most crucial developments is warranted, and thus, this 2017 Magnetism Roadmap article is a timely endeavour. The change in landscape is hereby not exclusively scientific, but also reflects the magnetism related industrial application portfolio. Specifically, Hard Disk Drive technology, which still dominates digital storage and will continue to do so for many years, if not decades, has now limited its footprint in the scientific Topical ReviewOriginal content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. and research community, whereas significantly growing interest in magnetism and magnetic materials in relation to energy applications is noticeable, and other technological fields are emerging as well. Also, more and more work is occurring in which complex topologies of magnetically ordered states are being explored, hereby aiming at a technological utilization of the very theoretical concepts that were recognised by the 2016 Nobel Prize in Physics.Given this somewhat shifted scenario, it seemed appropriate to select topics for this Roadmap article that represent the three core pillars of magnetism, namely magnetic materials, magnetic phenomena and associated characterization techniques, as well as applications of magnetism. While many of the contributions in this Roadmap have clearly overlapping relevance in all three fields, their relative focus is mostly associated to one of the three pillars. In this way, the interconnecting roles of having suitable magnetic materials, understanding (and being able to characterize) the underlying physics of their behaviour and utilizing them for applications and devices is well illustrated, thus giving an accurate snapshot of the world of magnetism in 2017.The article consists of 14 sections, each written by an expert in the field and addressing a specific subject on two pages. Evidently, the depth at which each contribution can describe the subject matter is limited and a full review of their statuses, advances, challenges and perspectives cannot be fully accomplished. Also, magnetism, as a vibrant research field, is too diverse, so that a number of areas will not be adequately represented here, leaving space for further Roadmap editions in the future. However, this 2017 Magnetism Roadmap article can provide a frame that will enable the reader to judge where each subject and magnetism research field stands overall today and which directions it might take in the foreseeable future.The first mater...

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Section: Department Of Physics New York Universitysupporting

confidence: 58%

The 2017 Magnetism Roadmap

Sander

Valenzuela

Makarov

et al. 2017

J. Phys. D: Appl. Phys.

320

207

View full text Add to dashboard Cite

show abstract

“…nm with excellent agreement with NEB simulations and chip data retention measurements at higher temperature without external field [92], solving the long-standing paradox of inconsistent behavior of thermal stability at larger dimensions.…”

Section: Information Storingsupporting

confidence: 59%

“…Extension of ∆ (H) model to domain-wall-mitigated switching was performed recently (eq. (2) in [92])) and evaluation of ∆ using this model showed that indeed thermal stability is increasing linearly with increasing dimensions even well above 40…”

Section: Information Storingmentioning

confidence: 87%

Magnetoresistive Random Access Memory

2016

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A review of the developments in MRAM technology over the past 20 years is presented. The various MRAM generations are described with a particular focus on Spin-Transfer-Torque MRAM (STT-MRAM) which is currently receiving the greatest attention. The working principles of these various MRAM generations, the status of their developments, and demonstrations of working circuits, including already commercialized MRAM products, are discussed.

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“…A similar feature was observed in two-terminal MTJ devices, where the volume of the whole recording layer governs the thermal stability only below a critical size characterized by the DW width. [129][130][131] Another intriguing feature of the result shown in Fig. 5 is that W crit increases as t mag decreases.…”

Section: Current-induced Dw Motionmentioning

confidence: 83%

Magnetization switching schemes for nanoscale three-terminal spintronics devices

Fukami

Ohno

2017

Jpn. J. Appl. Phys.

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Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-ofconcept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

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Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

Cited by 37 publications

References 5 publications

The 2017 Magnetism Roadmap

The 2017 Magnetism Roadmap

Magnetoresistive Random Access Memory

Magnetization switching schemes for nanoscale three-terminal spintronics devices

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