“…NMP has a high hydrogen-bond-accepting ability, which, combined with its more appropriate Lewis base properties, allows the formation of a much more stable FAI●PbI 2 ●NMP adduct compared to DMSO [ 75 ]. The good nucleation of this more stable intermediate and also the rapid detachment of NMP during the annealing step induce the formation of a more uniform and covering film that ultimately cause a great reduction of defects [ 76 , 77 , 78 ]. According to the literature, the use of a small amount of NMP in combination with DMF in FAPbI 3 -based PSCs improved all V OC , J SC , and FF values, thus skyrocketing the efficiency of the devices [ 75 , 76 , 77 , 78 , 79 , 80 , 81 , 82 ].…”