2018
DOI: 10.1016/j.orgel.2018.09.038
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Solvent-free printing process for organic transistors using a naphthalene diimide bearing long alkyl chains

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Cited by 4 publications
(2 citation statements)
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“…In describing the reproducibility and the uniformity of the S-OTFT with the LCP insulator of randomly aligned RMs, eight different S-OTFTs were tested. Note that the uniformity of the TFT is one of critical factors for practical electronic applications [16,17]. The transfer curves of the eight devices were measured as a function of V g from −20 to −50 V at V d =−50 V. As shown in figure 1(b), the drain current levels of the eight devices were largely varied in the range between 10 −5 and 10 −7 A, particularly, the largest variation at V g =−50 V, being an indicative of the poor reproducibility/uniformity of the S-OTFT.…”
Section: S-otft With Lcp Gate Insulator Made Of Randomly Aligned Rmsmentioning
confidence: 99%
“…In describing the reproducibility and the uniformity of the S-OTFT with the LCP insulator of randomly aligned RMs, eight different S-OTFTs were tested. Note that the uniformity of the TFT is one of critical factors for practical electronic applications [16,17]. The transfer curves of the eight devices were measured as a function of V g from −20 to −50 V at V d =−50 V. As shown in figure 1(b), the drain current levels of the eight devices were largely varied in the range between 10 −5 and 10 −7 A, particularly, the largest variation at V g =−50 V, being an indicative of the poor reproducibility/uniformity of the S-OTFT.…”
Section: S-otft With Lcp Gate Insulator Made Of Randomly Aligned Rmsmentioning
confidence: 99%
“…The absence of solvent completely suppressed the exhaustion of volatile organic compounds (VOCs). No VOC emissions are preferred when electronic fabrication is replaced with a direct printing process [84][85][86][87].…”
Section: Introductionmentioning
confidence: 99%