Solution to the Surface Registration Problem Using X-Ray Standing Waves

Golovchenko, Jene Andrew; Patel, J. R.; Kaplan, Dean; Cowan, P. L.; Bedzyk, M. J.

doi:10.1103/physrevlett.49.560

Cited by 243 publications

(70 citation statements)

References 7 publications

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“…The XSW analysis from oxidized surface showed random distribution of the S both in (0 0 0 6) and (10)(11)(12)(13)(14) directions.…”

Section: Xsw Analysismentioning

confidence: 99%

“…The XSW method has been used to measure atomic-scale position of adsorbed atoms on surfaces utilizing the spatial variation of electric field intensity of the standing wave generated by the coherent interference between incident and Bragg diffracted X-rays [10][11][12][13]. By scanning the sample angle or incident X-ray energy through the Bragg condition, the XSW nodes moves from the Bragg diffraction planes to the middle between adjacent Bragg planes.…”

Section: Introductionmentioning

confidence: 99%

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Interaction of H2S with α-Fe2O3(0001) surface

2007

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“…The XSW analysis from oxidized surface showed random distribution of the S both in (0 0 0 6) and (10)(11)(12)(13)(14) directions.…”

Section: Xsw Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Interaction of H2S with α-Fe2O3(0001) surface

2007

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“…Passivation of silicon surfaces by adsorbed bromine, observed in experiments on samples prepared by a wet chemical method [13][14][15][16][17] and theoretical calculations [18], has raised a number of possibilities of both scientific and technological importance. These include the possibility that such passivated surfaces might permit epitaxy of thin overlayer films and growth of self-assembled structures without the expensive and, from production standpoint, unacceptable need for ultra high vacuum (UHV) processing.…”

Section: Introductionmentioning

confidence: 99%

Self-assembled growth of nanostructural Ge islands on bromine-passivated Si(111) surfaces at room temperature

et al. 2002

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We have deposited relatively thick ( 60 nm) Ge layers on Br-passivated Si(111) substrates by thermal evaporation under high vacuum conditions at room temperature. Ge has grown in a layer-plus-island mode although it is different from the Stranski-Krastanov growth mode observed in epitaxial growth. Both the islands and the layer are nanocrystalline. This appears to be a consequence of reduction of surface free energy of the Si(111) substrate by Br-passivation. The size distribution of the Ge nanoislands has been determined. The Br-Si(111) substrates were prepared by a liquid treatment, which may not produce exactly reproducible surfaces. Nevertheless, some basic features of the nanostructural island growth are reasonably reproducible, while there are variations in the details of the island size distribution.

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“…It appears that the corrections should be added for t larger than several hundred A. The thickness t should be understood as the effective thickness which is larger than the nominal one for inclined Bragg reflections in XSW experiences (Golovchenko, Patel, Kaplan, Cowan & Bedzyk, 1982;Taccoen, Malgrange, Zheng, Boulliard & Capelle, 1994). For an inclined symmetric reflection, for instance, the effective thickness is increased from the nominal one by the factor 1 / cos(-n, h) with (-n, h) the angle between the crystal surface normal vector -n and the reflecting vector h.…”

Section: L(jl(z = T) = I(b)(z = T) Given By (14)mentioning

confidence: 99%

Theoretical Analysis of X-ray Standing Waves and Reflectivity in the Case of a Crystal Containing a Thin Buried Layer

Zheng¹,

Boulliard²,

Capelle³

et al. 1998

Acta Cryst Sect A

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The case of a crystal containing a thin buried layer is analysed within the dynamical theory of X-ray diffraction. In this case, the upper thin part of the crystal, above the buffed layer, is only shifted with respect to the lower bulk part. The main feature is the phase shift q9 for the structure factors between the upper thin part and the lower bulk part. Owing to this phase shift, the backward wavefield, the wavefield with the energy flux directed out of the crystal, is excited in the thin part of the crystal. It is found that only the backward wavefield may be excited within the Bragg total reflection. This gives rise to anomalous transmission of the X-rays in the crystal. When the crystal is tilted across the Bragg angle, the variation of the intensity of X-rays in the buried layer due to the transmission term may be stronger than the one due to the anomalous absorption. Thus, this phenomenon should be taken into account in X-ray standing-wave (XSW) analysis. The excitation of the backward wavefield is also responsible for the appearance of oscillations in the reflectivity profile. The oscillation period is determined by the thickness of the upper thin part. The position and the amplitude of the oscillation directly provide the value of the phase qg. It is thus interesting to simultaneously record the X-ray reflectivity and the XSW measurements when studying the buried layer.

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Solution to the Surface Registration Problem Using X-Ray Standing Waves

Cited by 243 publications

References 7 publications

Interaction of H2S with α-Fe2O3(0001) surface

Interaction of H2S with α-Fe2O3(0001) surface

Self-assembled growth of nanostructural Ge islands on bromine-passivated Si(111) surfaces at room temperature

Theoretical Analysis of X-ray Standing Waves and Reflectivity in the Case of a Crystal Containing a Thin Buried Layer

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