Solution Synthesis of Germanium Nanocrystals Demonstrating Quantum Confinement

Synthesis and Characterization of Germanium Coordination Compounds for Production of Germanium Nanomaterials

“…Since the materials are nanopowders, the resulting patterns were broad and due to this fact, it is not possible to rule out the potential inclusion of amorphous Ge nanomaterials in the resulting powders. [35, 36] Transmission electron microscopy analyses were obtained on these materials and their images are shown in Figure 11a–e for 1, 2, 3 , and 5 , respectively. The results obtained in this work are consistent with the previously disseminated efforts for production of Ge(0).…”

Glymes as versatile solvents for chemical reactions and processes: from the laboratory to industry

“…Methyl-terminated Ge nanocrystals with an average particle size of around 3.5 nm were produced by the metathesis reaction between the Zintl salt NaGe and GeCl 4 in degassed monoglyme or diglyme. 332 The Kauzlarich and Taylor group 333, 334 further extended this method to prepare alkyl-terminated crystalline Ge nanoparticles by the reactions between GeCl 4 and NaGe, KGe, or Mg 2 Ge followed by surface termination with alkyl Li and Grignard reagents in glymes. It was observed that diglyme and triglyme seemed to support the reaction better than monoglyme and the reactions in triglyme were much faster than in diglyme.…”

Mixed Tetrahedral Zintl Clusters: Single Crystal Structure Determination of [Si4‐xGex]4−, [(MesCu)2(Si4‐xGex)]4−, and the 29Si MAS NMR Spectra of A4Si2Ge2 (A=K, Rb)

“…[9][10][11] There are two independent Ge sites (Ge1 and Ge2), and each site forms an independent tetrahedral subunit (Ge1) 4 and (Ge2) 4 , respectively. The interatomic distances between two tetrel atoms E in the heteroatomic tetrahedra in 1 a (dA C H T U N G T R E N N U N G (E-E) = 2.525(2)À2.527(2) ) and 1 b (dA C H T U N G T R E N N U N G (E-E) = 2.551(1)À2.581(1) ) are significantly longer compared to the ones in [Si 4 ] 4À (dA C H T U N G T R E N N U N G (Si-Si) = 2.410(1) to 2.440(3) for A 4 Si 4 and A = K, Rb), [10] but slightly shorter than those in [Ge 4 ] 4À (dA C H T U N G T R E N N U N G (Ge-Ge) = 2.574(4) to 2.587(3) for A 4 Ge 4 and A = K, Rb). [11] The A-E distances between 3.334(3) and 3.5765(2) for 1 a and between 3.490(1) and 3.755(1) for 1 b match to the ones in A 4 Si 4 (dA C H T U N G T R E N N U N G (A-Si) = 3.467(1)À3.656(2) for A = K, Rb) and A 4 Ge 4 (dA C H T U N G T R E N N U N G (A-Ge) = 3.510(4)À3.7663(2) for A = K, Rb).…”

“…Attempts to synthesize Si x Ge 1Àx alloy nanostructures use more often physical methods including evaporation, magnetron co-sputtering, and molecular beam epitaxy followed by high temperature annealing, but the applicability of sol-gel polymers have also been reported. [2] Mixed element core-shell nanoparticles Ge/SiR and Ge/SiO 2 are synthesized from Mg 2 Ge and SiCl 4 after addition of RLi (R = butyl) or H 2 O 2 in solution. [3] Following the synthetic methods for Si and Ge nanostructures, also tetrahedral Zintl clusters might be suitable to form Si/ Ge mixed semiconducting materials.…”

“…[3] Following the synthetic methods for Si and Ge nanostructures, also tetrahedral Zintl clusters might be suitable to form Si/ Ge mixed semiconducting materials. For example, nanosized crystalline Ge particles are obtained when the binary Zintl phase A 4 Ge 4 (A = Na, K) reacts in a metathesis reaction with GeCl 4, [4][5][6][7] and Si-based nanoparticles are formed upon the reaction of K 4 Si 4 with SiCl 4 . [8] The nature of the homoatomic tetrahedral Zintl phases with the nominal composition A 4 E 4 (A = Na-Cs; E = Si, Ge) is well studied by single crystal and powder X-ray diffraction as well as by 29 Si magic angle spinning nuclear magnetic resonance (MAS NMR) and Raman spectroscopy.…”