Solution Synthesis of Colloidal Gallium Nitride at Unprecedented Low Temperatures

Manz, A.; Birkner, Alexander; Kolbe, Matthias; Fischer, Roland A.

doi:10.1002/(sici)1521-4095(200004)12:8<569::aid-adma569>3.0.co;2-k

Cited by 68 publications

(12 citation statements)

References 3 publications

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“…No GaN was produced in the absence of the capping ligand HDA, which suggests a possible transamination reaction. However, the reaction time was still at least 24 h. Manz et al reported the synthesis of GaN NCs at remarkably low temperature (220 °C) and low reaction time (15–300 min) in triglyme solution using the following organometallic azide precursors: [Et 2 Ga(N 3 )] 3 , (N 3 ) 2 Ga[(CH 2 ) 3 NMe 2 ] and (Et 3 N)Ga(N 3 ) . Depending on the reaction conditions, several sizes in the range of 2.5 nm up to 500 nm have been obtained.…”

Section: Synthesis Of Different Families Of Semiconductor Nanocrystalsmentioning

confidence: 99%

Synthesis of Semiconductor Nanocrystals, Focusing on Nontoxic and Earth-Abundant Materials

et al. 2016

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We review the synthesis of semiconductor nanocrystals/colloidal quantum dots in organic solvents with special emphasis on earth-abundant and toxic heavy metal free compounds. Following the Introduction, section 2 defines the terms related to the toxicity of nanocrystals and gives a comprehensive overview on toxicity studies concerning all types of quantum dots. Section 3 aims at providing the reader with the basic concepts of nanocrystal synthesis. It starts with the concepts currently used to describe the nucleation and growth of monodisperse particles and next takes a closer look at the chemistry of the inorganic core and its interactions with surface ligands. Section 4 reviews in more detail the synthesis of different families of semiconductor nanocrystals, namely elemental group IV compounds (carbon nanodots, Si, Ge), III-V compounds (e.g., InP, InAs), and binary and multinary metal chalcogenides. Finally, the authors' view on the perspectives in this field is given.

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Section: Synthesis Of Different Families Of Semiconductor Nanocrystalsmentioning

confidence: 99%

Synthesis of Semiconductor Nanocrystals, Focusing on Nontoxic and Earth-Abundant Materials

et al. 2016

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“…10,11,12 Though the synthesis of high quality nanometric sized II-VI semiconductors is already very well established, the synthesis and studies of high quality III-V semiconducting nanocrystals are being increasingly reported in the recent literature. 16,17,18,19,20 III-V semiconductors provide a material basis for a number of already existing commercial products, as well as new cutting edge electronic and optoelectronic devices, like heterostructure bipolar transistors, diode lasers, light emitting diodes, electro-optic modulators 21 and in biology, as fluorescent labels. 22 Hence, it becomes necessary to have an electronic structure model with accurate predictive abilities to describe the quantum confinement effects in these nanocrystals.…”

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confidence: 99%

Electronic structure of and quantum size effect in III-V and II-VI semiconducting nanocrystals using a realistic tight binding approach

et al. 2005

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We analyze the electronic structure of group III-V semiconductors obtained within full potential linearized augmented plane wave (FP-LAPW) method and arrive at a realistic and minimal tightbinding model, parameterized to provide an accurate description of both valence and conduction bands. It is shown that cation sp 3 − anion sp 3 d 5 basis along with the next nearest neighbor model for hopping interactions is sufficient to describe the electronic structure of these systems over a wide energy range, obviating the use of any fictitious s * orbital, employed previously. Similar analyses were also performed for the II-VI semiconductors, using the more accurate FP-LAPW method compared to previous approaches, in order to enhance reliability of the parameter values.Using these parameters, we calculate the electronic structure of III-V and II-VI nanocrystals in real space with sizes ranging upto about 7 nm in diameter, establishing a quantitatively accurate description of the band-gap variation with sizes for the various nanocrystals by comparing with available experimental results from the literature.

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“…As shown in figure 3, the spectrum shows a composition consisting of Ga and P and also O, C and N. The presence of C may be attributed to either carbon dioxide adsorption on the surface of GaP nanoparticles or the remains of the solvent [12]. The Ga 3d component centred at 21.4 eV, accorded with the reference value for GaP [13], can be indexed to Ga (III) from GaP.…”

Section: Xps and Esrmentioning

confidence: 91%

Fast Optical Recording of Polarization Holographic Grating Based on an Azo-Dye-Doped Polymer-Ball-Type Polymer-Dispersed Liquid Crystal Film

Fuh

Lee

Cheng

2003

Jpn. J. Appl. Phys.

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Gallium phosphide (GaP) nanoparticles were synthesized by reacting GaCl 3 with Na 3 P in xylene. An electron spin resonance spectrum attributed to the Ga self-interstitial (Ga i ) defect in GaP nanoparticles was observed with factor g = 2.0028. From the ultraviolet and visible (UV-vis) spectrum it is inferred that GaP nanoparticles exhibit a direct transition and an indirect transition, and the blue-shifted band gaps are ascribed to the Ga i defect as well as the nanosize effect. In the Raman spectrum the transverse optical and longitudinal optical peaks have slight red shifts, which are attributed to the intrinsic impurities or defects in GaP nanoparticles. The Raman and infrared spectra both indicate that the surface optical (SO) phonon mode occurs in GaP nanoparticles. The SO mode originates from the defects on the surface of GaP nanoparticles. The optical properties associated with intrinsic defects hold promise for some potential applications in future nanodevices.

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Solution Synthesis of Colloidal Gallium Nitride at Unprecedented Low Temperatures

Cited by 68 publications

References 3 publications

Synthesis of Semiconductor Nanocrystals, Focusing on Nontoxic and Earth-Abundant Materials

Synthesis of Semiconductor Nanocrystals, Focusing on Nontoxic and Earth-Abundant Materials

Electronic structure of and quantum size effect in III-V and II-VI semiconducting nanocrystals using a realistic tight binding approach

Fast Optical Recording of Polarization Holographic Grating Based on an Azo-Dye-Doped Polymer-Ball-Type Polymer-Dispersed Liquid Crystal Film

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