Solution processed, vertically stacked hetero-structured diodes based on liquid-exfoliated WS<sub>2</sub> nanosheets: from electrode-limited to bulk-limited behavior

Liu, Shixin; Ding, Er‐Xiong; Kelly, Adam G.; Doolan, Luke; Gabbett, Cian; Kaur, Harneet; Munuera, José M.; Carey, Tian; Garcia, James R.; Coleman, Jonathan N.

doi:10.1039/d2nr04196k

Cited by 5 publications

(3 citation statements)

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“…6a and Supplementary Note 12) we measured the root mean square roughness, R RMS , of the EE and LPE networks to be ≈122 nm and ≈182 nm respectively. The reduced surface roughness in printed EE networks can improve interface quality in vertically stacked devices 80 .…”

Section: Characterising Electrical and Device Propertiesmentioning

confidence: 99%

Quantitative analysis of printed nanostructured networks using high-resolution 3D FIB-SEM nanotomography

Gabbett,

Doolan,

Synnatschke

et al. 2024

Nat Commun

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Networks of solution-processed nanomaterials are becoming increasingly important across applications in electronics, sensing and energy storage/generation. Although the physical properties of these devices are often completely dominated by network morphology, the network structure itself remains difficult to interrogate. Here, we utilise focused ion beam – scanning electron microscopy nanotomography (FIB-SEM-NT) to quantitatively characterise the morphology of printed nanostructured networks and their devices using nanometre-resolution 3D images. The influence of nanosheet/nanowire size on network structure in printed films of graphene, WS2 and silver nanosheets (AgNSs), as well as networks of silver nanowires (AgNWs), is investigated. We present a comprehensive toolkit to extract morphological characteristics including network porosity, tortuosity, specific surface area, pore dimensions and nanosheet orientation, which we link to network resistivity. By extending this technique to interrogate the structure and interfaces within printed vertical heterostacks, we demonstrate the potential of this technique for device characterisation and optimisation.

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Section: Characterising Electrical and Device Propertiesmentioning

confidence: 99%

Quantitative analysis of printed nanostructured networks using high-resolution 3D FIB-SEM nanotomography

Gabbett,

Doolan,

Synnatschke

et al. 2024

Nat Commun

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“…Two-dimensional absorbing and luminescent materials, such as monolayer (1-L) transition-metal dichalcogenides (TMDs), can be used in transparent, flexible, stretchable, and wearable electronics, because of their layered structures, which can potentially lead to outstanding optical, electrical, and thermomechanical properties. − Among 1-L TMDs, tungsten diselenide (WSe 2 ) is one of the most promising materials for use in optical sensors, because it exhibits exceptional optical and electrical properties, when compared with other TMD materials. − Therefore, several research groups have actively studied 1-L WSe 2 , in terms of its Raman spectra, exciton dynamics, electrical properties, photoinduced charge transfer, p -/ n -type doping, , field emission, and device applications. , Two main key issues associated with the TMDs integration are the crystalline strain and damage to the 1-L WSe 2 by the metal contact. These crucial issues hinder further improvements in device performance. − The crystalline quality and optical properties of 1-L TMDs are considerably deteriorated because of the significant strain induced when depositing onto inhomogeneous planar substrates. , Such substantial strain can modify the electronic properties of 1-L TMDs by changing their van der Waals bonding and lattice constants. , To overcome these strain issues, the optical and mechanical properties of suspended 1-L TMDs have been studied. − However, in previous reports, the suspended regions of 1-L TMDs were localized to specific small areas, which is a major limitation for applications.…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh Photosensitivity Based on Single-Step Lay-on Integration of Freestanding Two-Dimensional Transition-Metal Dichalcogenide

Jeong,

Nomenyo,

et al. 2024

ACS Nano

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Two-dimensional transition-metal dichalcogenides have attracted significant attention because of their unique intrinsic properties, such as high transparency, good flexibility, atomically thin structure, and predictable electron transport. However, the current state of device performance in monolayer transition-metal dichalcogenide-based optoelectronics is far from commercialization, because of its substantial strain on the heterogeneous planar substrate and its robust metal deposition, which causes crystalline damage. In this study, we show that strain-relaxed and undamaged monolayer WSe 2 can improve a device performance significantly. We propose here an original point-cell-type photodetector. The device consists in a monolayer of an absorbing TMD (i.e., WSe 2 ) simply deposited on a structured electrode, i.e., core−shell silicon−gold nanopillars. The maximum photoresponsivity of the device is found to be 23.16 A/W, which is a significantly high value for monolayer WSe 2 -based photodetectors. Such point-cell photodetectors can resolve the critical issues of 2D materials, leading to tremendous improvements in device performance.

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“…A wide range of methodologies has been reported in the literature to obtain single layers of van der Waals solids that have unique properties compared to their bulk counterparts [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 ]. Boron nitride nanosheets (BNNs) have been produced by several different approaches, including micromechanical, unzipping BN nanotubes, chemical vapor deposition (CVD), and solution-processed exfoliation.…”

Section: Introductionmentioning

confidence: 99%

Sustainable Synthesis of Highly Biocompatible 2D Boron Nitride Nanosheets

et al. 2022

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2D ultrafine nanomaterials today represent an emerging class of materials with very promising properties for a wide variety of applications. Biomedical fields have experienced important new achievements with technological breakthroughs obtained from 2D materials with singular properties. Boron nitride nanosheets are a novel 2D layered material comprised of a hexagonal boron nitride network (BN) with interesting intrinsic properties, including resistance to oxidation, extreme mechanical hardness, good thermal conductivity, photoluminescence, and chemical inertness. Here, we investigated different methodologies for the exfoliation of BN nanosheets (BNNs), using ball milling and ultrasound processing, the latter using both an ultrasound bath and tip sonication. The best results are obtained using tip sonication, which leads to the formation of few-layered nanosheets with a narrow size distribution. Importantly, it was observed that with the addition of pluronic acid F127 to the medium, there was a significant improvement in the BN nanosheets (BNNs) production yield. Moreover, the resultant BNNs present improved stability in an aqueous solution. Cytotoxicity studies performed with HeLa cells showed the importance of taking into account the possible interferences of the nanomaterial with the selected assay. The prepared BNNs coated with pluronic presented improved cytotoxicity at concentrations up to 200 μg mL−1 with more than 90% viability after 24 h of incubation. Confocal microscopy also showed high cell internalization of the nanomaterials and their preferential biodistribution in the cell cytoplasm.

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Solution processed, vertically stacked hetero-structured diodes based on liquid-exfoliated WS₂ nanosheets: from electrode-limited to bulk-limited behavior

Abstract: Vertically stacked metal-semiconductor-metal heterostructures, based on liquid-processed nanomaterials, hold great potential for various printed electronic applications. Here we describe the fabrication of such devices by spray-coating semiconducting tungsten disulfide (WS2)...

Cited by 5 publications

References 65 publications

Quantitative analysis of printed nanostructured networks using high-resolution 3D FIB-SEM nanotomography

Quantitative analysis of printed nanostructured networks using high-resolution 3D FIB-SEM nanotomography

Ultrahigh Photosensitivity Based on Single-Step Lay-on Integration of Freestanding Two-Dimensional Transition-Metal Dichalcogenide

Sustainable Synthesis of Highly Biocompatible 2D Boron Nitride Nanosheets

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Solution processed, vertically stacked hetero-structured diodes based on liquid-exfoliated WS2 nanosheets: from electrode-limited to bulk-limited behavior

Abstract: Vertically stacked metal-semiconductor-metal heterostructures, based on liquid-processed nanomaterials, hold great potential for various printed electronic applications. Here we describe the fabrication of such devices by spray-coating semiconducting tungsten disulfide (WS2)...

Cited by 5 publications

References 65 publications

Quantitative analysis of printed nanostructured networks using high-resolution 3D FIB-SEM nanotomography

Quantitative analysis of printed nanostructured networks using high-resolution 3D FIB-SEM nanotomography

Ultrahigh Photosensitivity Based on Single-Step Lay-on Integration of Freestanding Two-Dimensional Transition-Metal Dichalcogenide

Sustainable Synthesis of Highly Biocompatible 2D Boron Nitride Nanosheets

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Solution processed, vertically stacked hetero-structured diodes based on liquid-exfoliated WS₂ nanosheets: from electrode-limited to bulk-limited behavior