Solution-processed transparent conducting Ag nanowires layer for photoelectric device applications

ACS Appl. Mater. Interfaces

et al. 2017

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In this work, we demonstrate the effectiveness of Ag nanowires (AgNWs) to design a high-speed broadband photodetector. A simple AgNW solution was spin-coated on a Si substrate to form a Schottky junction. The junction properties were investigated using current-voltage characteristics and Mott-Schottky analysis. The present device had a remarkably fast response speed, e.g., rising time τ = 784 ns and fall time τ = 92 μs, with good reproducibility over a wide range of switching frequencies (50 Hz-50 kHz). Such a high performance was attributed to the strong electric field created at the AgNW/Si interface without an external electric field, enabling the efficient separation of photogenerated electron-hole pairs. The present study will open a new avenue to design future optoelectronic devices and energy devices including solar cells.

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Section: Introductionmentioning

confidence: 99%

High-Speed, Self-Biased Broadband Photodetector-Based on a Solution-Processed Ag Nanowire/Si Schottky Junction

Kumar

ACS Appl. Mater. Interfaces

et al. 2017

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“…MS analysis confirmed the high quality of the Schottky junction properties, which were consistent during the application of various frequencies (1 kHz to 20 kHz). The procedure for estimating the band edges in the MS analysis is detailed elsewhere. , Estimated energy band parameters of the AgNWs-embedding ITO film at the Si interface, determined using MS analysis, are shown in Figure b, where E O , E C , E F , E V , ϕ bi , and SCR are the vacuum level, conduction band, Fermi level, valence band, built in potential, and space charge region, respectively. The present MS analyses reveal that the formation of a 950 nm wider SCR led to a value of ϕ bi of 0.7 eV because of the 4.23 eV value of work function of the AgNWs-embedding ITO film on the p-Si; this work function value in turn influenced the polarization of the free charges.…”

Section: Results and Discussionmentioning

confidence: 99%

Thermally Stable Silver Nanowires-Embedding Metal Oxide for Schottky Junction Solar Cells

ACS Appl. Mater. Interfaces

Park

et al. 2016

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Thermally stable silver nanowires (AgNWs)-embedding metal oxide was applied for Schottky junction solar cells without an intentional doping process in Si. A large scale (100 mm(2)) Schottky solar cell showed a power conversion efficiency of 6.1% under standard illumination, and 8.3% under diffused illumination conditions which is the highest efficiency for AgNWs-involved Schottky junction Si solar cells. Indium-tin-oxide (ITO)-capped AgNWs showed excellent thermal stability with no deformation at 500 °C. The top ITO layer grew in a cylindrical shape along the AgNWs, forming a teardrop shape. The design of ITO/AgNWs/ITO layers is optically beneficial because the AgNWs generate plasmonic photons, due to the AgNWs. Electrical investigations were performed by Mott-Schottky and impedance spectroscopy to reveal the formation of a single space charge region at the interface between Si and AgNWs-embedding ITO layer. We propose a route to design the thermally stable AgNWs for photoelectric device applications with investigation of the optical and electrical aspects.

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“…Here it is assumed that an ideal anisotype heterojunction is formed at the contact between AgNWs embedded ITO and Si layers and the built in potential V bi corresponds to the difference in their work function [28,29]. Depletion zones are formed on both the sides and are modulated by the applied bias.…”

Section: Impedance Spectroscopy (Is) Analysis Of Solar Cellmentioning

confidence: 99%

High potential for the optimum designs for a front contact and junction: A route to heterojunction solar cell

Yadav

Solar Energy Materials and Solar Cells

et al. 2016

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