Solution-Processed TiO₂-Based Schottky Diodes With a Large Barrier Height

Abstract

Thin-film Schottky diodes are one of the key elements in large-area flexible electronics. In such devices, a highly uniform semiconductor film is vital for the device performance. Here we propose a novel solution-based anodization method to form a conformal oxide semiconductor layer for Schottky diodes. The thickness of the anodized TiO2 layer varied from 12 to 22.5 nm. The optimized Pt/TiO2/Ti Schottky diode demonstrated a large barrier height of 1.19 eV, an on/off ratio as high as 3.5 × 10 6 at ± 2 V, and an ideality factor of 1.5. The average breakdown electric field was 5.5 MV/cm, which is higher than typical values of conventional solution processed TiO2. The diode with a 15-nm-thick TiO2 layer also showed good rectification properties up to 0.7 MHz.

Fully Printed and Flexible Schottky Diodes Based on Carbon Nanomaterials Operating Up to 5 MHz

“…fc reaches a value close to 5 MHz for the wider device, which is within the HF range. This value is in line with or better than several organic and inorganic solutionprocessed diodes [15], [16], [20], [66], although not comparable to the best results in literature [18], [25], [67]. With further optimizations, the cutoff frequency can be increased, for example with the goal of achieving 13.56 MHz, a frequency widely used for RFID tags [68].…”

Interfacial Oxidized Gate Insulators for Low-Power Oxide Thin-Film Transistors

“…The usual ways of depositing a gate dielectric are vacuum processes such as plasma-enhanced chemical vapor deposition (PECVD), sputtering, and atomic layer deposition (ALD). , The deposition of a thin gate dielectric is one way to decrease the operating voltage of a TFT. − For a thin high-dielectric gate insulator, aluminum anodic oxidation was applied to obtain an IGZO TFT with a 1 V operation voltage. ,− …”

Boosted photoresponsivity using silver nanoparticle decorated TiO2 nanowire/reduced graphene oxide thin-film heterostructure

“…UV detectors based on wide band gap materials such as TiO 2 are one of the most studied semiconductors among metal oxides and have garnered huge interest due to their low fabrication cost, high bandgap, stability and non-toxicity in nature [3,4]. A TiO 2 -based Schottky UV detector with high responsivity was reported recently by Zhang et al [5], but the speed requires significant improvement. This limitation can be overcome by fabricating a p-n junction device based on TiO 2 , such as Co 3 O 4 /TiO 2 [6], TiO 2 /PANI [7], TiO 2 /Cu 2 O [8] or NiO/TiO 2 [9], which have shown enhanced performance in terms of speed by an effective charge transfer mechanism.…”