2020
DOI: 10.1016/j.orgel.2020.105777
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Solution-processed self-assemble engineering PDI derivative polymorphisms with optoelectrical property tuning in organic field-effect transistors

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Cited by 6 publications
(5 citation statements)
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“…It has also been shown that singlet fission can be enhanced near the edges of rubrene crystals due to the introduction of structural disorder that lowers the symmetry of the crystal . We note that EP-PDI exhibits polymorphism, which suggests that unique structures could be formed at EP-PDI crystal edges that may impact their dynamics. This scenario not only could be responsible for the differences in dynamics observed within the bulk and at the edge of the crystal but also may explain the change in the sign of the signal near the top portion of the crystal.…”
Section: Resultsmentioning
confidence: 99%
“…It has also been shown that singlet fission can be enhanced near the edges of rubrene crystals due to the introduction of structural disorder that lowers the symmetry of the crystal . We note that EP-PDI exhibits polymorphism, which suggests that unique structures could be formed at EP-PDI crystal edges that may impact their dynamics. This scenario not only could be responsible for the differences in dynamics observed within the bulk and at the edge of the crystal but also may explain the change in the sign of the signal near the top portion of the crystal.…”
Section: Resultsmentioning
confidence: 99%
“…Among the solution processable OSCs, N , N ′-dipentyl-3,4,9,10-perylenedicarboximide (PTCDI-C 5 ) is a perylene tetracarboxylic-diimide (PTCDI) derivative that has been widely studied as an n -type OSC owing to its molecular design with a conjugated polyaromatic perylene backbone, which has high electron affinity and strong π–π stacking interaction. It is also a potential material for the solution process because the additional side chains introduced to the perylene backbone increase the solubility for typical organic solvents. However, previously reported results of solution-processed PTCDI-C 5 crystals on Si/SiO 2 substrate indicated low charge carrier mobility (μ FET ∼ 6.9 × 10 –5 cm 2 /V·s) under ambient conditions (with rapid deterioration after a few hours without a passivation layer) or vacuum or N 2 conditions, , similar to the transistors with a thermally deposited thin film layer. , Recently, OFETs with a combination of PTCDI-C 5 crystals and other OSC materials were reported to form via solution pinning and were successfully fabricated and characterized as ambipolar transistors or phototransistors under ambient conditions. However, the electronic characteristics of PTCDI-C 5 crystal-based devices have not been thoroughly studied.…”
Section: Introductionmentioning
confidence: 99%
“…36,37 Therefore, the selective growth of BTR nanocrystals with controlled morphology for generating 1D and 2D structures is crucial since the fundamental chemical and physical properties may be very different, which may lead to different applications. 33,38–40…”
Section: Introductionmentioning
confidence: 99%
“…36,37 Therefore, the selective growth of BTR nanocrystals with controlled morphology for generating 1D and 2D structures is crucial since the fundamental chemical and physical properties may be very different, which may lead to different applications. 33,[38][39][40] In this work, we grow BTR single crystals with two types of morphologies by liquid-phase methods: BTR micro-ribbons and 2D crystal films. We fabricated the BTR micro-ribbons using the self-assembly process of reprecipitation in liquid and obtained the BTR 2D crystal film using the two-dimensional spatial confinement method.…”
Section: Introductionmentioning
confidence: 99%