Solution-processed poly(3-hexylthiophene) vertical organic transistor

Abstract

The fabrication and operation of a solution-processed vertical organic transistor are now demonstrated. The vertical structure provides a large cross section and a short channel length to counter the inherent limitations of the organic materials. The operation of a vertical organic transistor relies on a transition metal oxide layer, V2O5, to lower the carrier injection barrier at the organic/metal interface. The effect of the oxide thickness was examined to verify the role of transition metal oxide in device operation. By studying the device performance at different temperatures and in solvent environments, an operating mechanism that occurs via an ion drift and doping process was proposed. The drift direction of the dissolved Li+ ion can be controlled by altering the gate voltage bias in order to change the carrier injection barrier.

A 1-V operated polymer vertical transistor with high on/off current ratio

“…However, even with identical low base leakage current, C60 SCLT with LiF emitter suffer significant high off current while C60 SCLT with Al emitter can be successfully turned off. We believe this interesting phenomenon is caused by the doping process of Li + since Li + doping in P3HT and pentacene have been reported (6). The doping effect increases the conductivity of C60, enlarges the EC diode current, and also shields the base control ability to turn off the channel.…”

Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio

“…In previous reports, vertical polymer metal-base transistors with various base conformations have been demonstrated to reduce the operation voltage to be less than 10 V. [5][6][7][8] However, it is important to further reduce the operation voltage to suppress power consumption. Since the vertical channel is a thin polymer semiconductor film sandwiched by two metals ͑emitter and collector͒, the thin polymer film gives rise to a low channel resistance while the injection barrier from metal to polymer causes large contact resistance at the metal/polymer interface.…”

Vertical low-voltage oxide transistors gated by microporous SiO2/LiCl composite solid electrolyte with enhanced electric-double-layer capacitance

“…2 Although many efforts have been made for improving their performance, the reported vertical organic FETs still exhibit a high operation voltage ͑Ͼ5 V͒ and non-Ohmic contact, which results in potential critical barrier for battery-powered portable applications. [7][8][9] At the same time, all researches are only focused on organic semiconductors and vertical FETs with inorganic oxide semiconductor channels are not reported.…”