2019
DOI: 10.1016/j.optmat.2019.109485
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Solution-processed method for high-performance Cu2ZnSn(S,Se)4 thin film solar cells and its characteristics

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Cited by 7 publications
(5 citation statements)
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“…101 The vacuum-based methods such as evaporation and sputtering have some drawbacks, such as high cost, elemental losses during deposition, and the requirement for more time. 12 Solution deposition methods offer a crucial approach for lowering the cost of photovoltaic device fabrication. 102 The solution coating approach can be classified into several groups such as: metal−salt/thiourea-based solution processes; hydrazine-based solution processes; thiol/amine-based solution processes; and dithiocarbamate-based solution processes.…”
Section: Solution Processing Approach For Doped Kesterites: Merits An...mentioning
confidence: 99%
See 3 more Smart Citations
“…101 The vacuum-based methods such as evaporation and sputtering have some drawbacks, such as high cost, elemental losses during deposition, and the requirement for more time. 12 Solution deposition methods offer a crucial approach for lowering the cost of photovoltaic device fabrication. 102 The solution coating approach can be classified into several groups such as: metal−salt/thiourea-based solution processes; hydrazine-based solution processes; thiol/amine-based solution processes; and dithiocarbamate-based solution processes.…”
Section: Solution Processing Approach For Doped Kesterites: Merits An...mentioning
confidence: 99%
“…It then gets condensed to form a solid film on the substrate . The vacuum-based methods such as evaporation and sputtering have some drawbacks, such as high cost, elemental losses during deposition, and the requirement for more time …”
Section: Solution Processing Approach For Doped Kesterites: Merits An...mentioning
confidence: 99%
See 2 more Smart Citations
“…Recently, thin-film based PV is proposed by many researchers to achieve a cost-effective fabrication technology, such as a PV device based on chalcogenide semiconductors includes Cu(In,Ga)(S,Se)2, (CIGSSe), Cu2ZnSn(S,Se)4, and (CZTSSe) [1][2][3][4]. These materials gave promising optoelectronic properties for absorber layer, bandgap engineering, and tailoring the interfacial carrier in transport layers.…”
Section: Introductionmentioning
confidence: 99%