Solution-Processed LiF for Work Function Tuning in Electrode Bilayers

Aytun, Taner; Turak, Ayse; Baikie, Iain D.; Halek, G.; Ow‐Yang, Cleva W.

doi:10.1021/nl202838a

Cited by 34 publications

(26 citation statements)

References 40 publications

(66 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Traditionally the Kelvin method has been applied for in-situ characterization of metals and semiconductors [2][3][4][5]. More recently it has been utilized in studies under ambient conditions of organic semiconductors: surface photovoltage characterization of bulk heterojunction organic solar cells [6]; p-type doping of P3HT with F 4 TCNQ [7] and ˚-tuning of graphene [8] and ITO [9].…”

Section: Introductionmentioning

confidence: 99%

Ambient pressure photoemission spectroscopy of metal surfaces

Baikie¹,

Grain²,

Sutherland³

et al. 2014

Applied Surface Science

View full text Add to dashboard Cite

a b s t r a c tWe describe a novel photoemission technique utilizing a traditional Kelvin probe as a detector of electrons/atmospheric ions ejected from metallic surfaces (Au, Ag, Cu, Fe, Ni, Ti, Zn, Al) illuminated by a deep ultra-violet (DUV) source under ambient pressure. To surmount the limitation of electron scattering in air the incident photon energy is rastered rather than applying a variable retarding electric field as is used with UPS. This arrangement can be applied in several operational modes: using the DUV source to determine the photoemission threshold (˚) with 30-50 meV resolution and also the Kelvin probe, under dark conditions, to measure contact potential difference (CPD) between the Kelvin probe tip and the metallic sample with an accuracy of 1-3 meV. We have studied the relationship between the photoelectric threshold and CPD of metal surfaces cleaned in ambient conditions. Inclusion of a second spectroscopic visible source was used to confirm a semiconducting oxide, possibly Cu 2 O, via surface photovoltage measurements with the KP. This dual detection system can be easily extended to controlled gas conditions, relative humidity control and sample heating/cooling.

show abstract

Section: Introductionmentioning

confidence: 99%

Ambient pressure photoemission spectroscopy of metal surfaces

Baikie¹,

Grain²,

Sutherland³

et al. 2014

Applied Surface Science

View full text Add to dashboard Cite

show abstract

“…Traditionally the Kelvin method has been applied for in-situ characterization of metals and semiconductors [5,6]. More recently it has been utilized in studies under ambient conditions: surface photovoltage characterization of bulk heterojunction organic solar cells [7] and Φ-tuning of graphene [8] and ITO [9]. Previous studies of metal solders [10] and ITO [11] have been performed using separate vacuum UPS measurements (absolute φ) and ambient pressure CPD.…”

mentioning

confidence: 99%

Near ambient pressure photoemission spectroscopy of metal and semiconductor surfaces

Baikie¹,

Grain²,

Sutherland³

et al. 2015

Phys. Status Solidi C

View full text Add to dashboard Cite

We describe a novel photoemission technique utilizing a traditional Kelvin probe as a detector of electrons/atmospheric ions ejected from metal and semiconductor surfaces (Al, Ag, Au, Si) illuminated by a Deep Ultra‐Violet (DUV) source at ambient pressure. In Constant Final State Yield Spectroscopy (CFSYS) the incident photon energy is rastered rather than applying a variable retarding electric field as in conventional UPS. For both ambient‐ and near ambient pressure‐photoemission spectroscopy (NAP‐PES) the CFSYS configuration overcomes the limitation of inelastic electron scattering in air. This arrangement can be applied in several operational modes: using the DUV source to determine the absolute work function (ϕ) of the metal with 50‐100 meV resolution and also the Kelvin probe, under dark conditions, to measure Contact Potential Difference (CPD) with an accuracy of 1‐3 meV. We show that the metal photoresponse agrees with Fowler theory. We have used CPD and linear extrapolated photoemission measurements to produce an energy level diagram for the native‐oxide covered Si. We propose a model of photoemission in air involving atmospheric ions. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…Indeed the application of inter-layers for improved electrical contacts is becoming an extremely popular strategy in both organic and inorganic semiconductor architectures. 12,13 Various mechanisms have been proposed for this performance, including favorable energy-band alignment and p-type doping of the organic material by the TMO. 14 MoO 3 is an insulating/semiconducting TMO; structurally it is based on strongly distorted edge-sharing octahedra.…”

mentioning

confidence: 99%