Solution-Processed Highly Efficient Cu₂ZnSnSe₄ Thin Film Solar Cells by Dissolution of Elemental Cu, Zn, Sn, and Se Powders

Abstract

Solution deposition approaches play an important role in reducing the manufacturing cost of Cu2ZnSnSe4 (CZTSe) thin film solar cells. Here, we present a novel precursor-based solution approach to fabricate highly efficient CZTSe solar cells. In this approach, low-cost elemental Cu, Zn, Sn, and Se powders were simultaneously dissolved in the solution of thioglycolic acid and ethanolamine, forming a homogeneous CZTSe precursor solution to deposit CZTSe nanocrystal thin films. Based on high-quality CZTSe absorber layer, pure selenide CZTSe solar cell with a photoelectric conversion efficiency of 8.02% has been achieved without antireflection coating.

Alkali Metal Doping for Improved CH3NH3PbI3 Perovskite Solar Cells

“…Figure 5b shows the C – V and 1/ C 2 – V curves of the PSCs for determining the effective hole carrier concentration of the perovskite absorber layer. Using the Mott–Schottky method, the net carrier concentration can be evaluated based on the Equation (2), 51 $N_{\mathrm{normalc}}(W)=2\mathrm{}\mathrm{ }/\mathrm{ }\mathrm{}q{K}_{\mathrm{normals}}{\epsilon }_0{A}^2\mathrm{\hspace{0.17em}}\mathrm{\hspace{0.17em}}\left(\mathrm{normald}false(1\mathrm{normal}\mathrm{normal }/\mathrm{normal}\mathrm{normal }{C}^{2}false)\mathrm{normal}\mathrm{normal }/\mathrm{normal}\mathrm{normal }\mathrm{normald}V\right)$where N c ( W ) is the net carrier concentration, q is the electron charge, K s is the semiconductor dielectric constant, ε 0 is the permittivity of free space, A is the area of the solar cell, C is the capacitance, and V is the applied voltage. It demonstrates that the alkali metal doped perovskite devices have changed carrier concentration based on above equation, and they also have led to a higher built‐in voltage (the point of intersection by epitaxy the curve of 1/ C 2 – V when it is equal to zero).…”

Organic–Inorganic Hybrid Perovskite with Controlled Dopant Modification and Application in Photovoltaic Device

“…In addition, the C – V and 1/ C 2 – V curves of the HSCs are shown in Figure d for determining the effective hole carrier concentration of the perovskite absorber layer. Using the Mott–Schottky method, the net carrier concentration can be calculated by the following equation: where Nc( W ) is the net carrier concentration, q is the electron charge, K s is the semiconductor dielectric constant, ε 0 is the permittivity of free space, A is the area of the solar cell, C is the capacitance, and V is the applied voltage. It demonstrates that the Li doping perovskite device has almost change in carrier concentration based on above equation, but it leads to a higher built‐in voltage, favorable for the improvement of open circuit voltage ( V oc ), which also accounts for the increase of V oc for Li doped perovskite device, further.…”

Efficient (Cu1−xAgx)2ZnSn(S,Se)4 solar cells on flexible Mo foils

“…[1][2][3][4][5][6] The CZTSSe solar cells on classical rigid soda glass (SLG) substrates have made good progress, with the highest PCE of 12.6% for the CZTSSe solar cells demonstrated by IBM. 7 However, the efficiency of the CZTSSe solar cells on exible substrates (with a PCE of 6.9%) is still lower than those on SLG substrates.…”