Solution-processed high stability top-gate W and F co-doped ZnSnO thin film transistors

Abstract

In this work, top-gate structured W: F co-doped Zn–Sn–O (ZTO) thin-film transistors (TFTs) with excellent stability are prepared by the solution process. Comparing with the undoped ZTO TFT, the mobility of W: F co-doped ZTO TFTs was up from 1.87 to 3.14 cm2 V−1 s−1, and the subthreshold swing decreases from 0.192 to 0.157 V/dec. Moreover, the W: F co-doped ZTO TFTs exhibit a small Vth shift of −0.09 V under negative bias illumination stress, which is close to one of the TFTs prepared by the traditional vacuum process. X-ray photoelectron spectroscopy and capacitance–voltage examination revealed that the enhanced stability is due to the fact that W: F co-doping can effectively suppress defect states in ZTO films. The results manifest that W: F co-doping may be a promising method for enhancing the stability of TFTs with the top-gate structure.

High-Performance Tin Oxide Thin-Film Transistors Realized by Codoping and Their Application in Logic Circuits

“…15 Recently, codoping has been proposed as an effective strategy to promote TFT performance, exhibiting an advantage over single doping. 16 Hu et al reported W and F codoped ZnSnO TFTs, achieving a mobility of 3.14 cm 2 /V•s and excellent negative bias illumination stress stability. 16 Hong et al fabricated Si and N codoped ZnO TFTs by atomic layer deposition.…”

“…16 Hu et al reported W and F codoped ZnSnO TFTs, achieving a mobility of 3.14 cm 2 /V•s and excellent negative bias illumination stress stability. 16 Hong et al fabricated Si and N codoped ZnO TFTs by atomic layer deposition. Their study demonstrated the feasibility of carrier concentration modulation through cation and anion codoping.…”

Enhanced Stability of Solution-Processed Indium–Zinc–Tin–Oxide Transistors by Tantalum Cation Doping

“…Solution-processed zinc-tin-oxide (ZnSnO) TFTs were widely investigated due to their excellent properties, such as a low-temperature synthesis process, simple fabrication, low cost, and resource sustainable ability [9][10][11]. However, oxygen vacancies have some negative effects on oxide films.…”