Solution‐Processed High‐Performance p‐Type Perovskite NdAlO₃ Thin Films for Transparent Electronics

Abstract

Transparent oxide semiconductors exhibit great potential as fundamental building blocks for electronic applications. However, the lack of high‐performance p‐type oxide materials limits their potential applications for transparent electronics. Ternary p‐type perovskite NdAlO3 thin films are prepared by spin coating and annealed at various temperatures. It is demonstrated that neodymium vacancies (VNd) is generated in NdAlO3 thin film, and the presence of VNd results in high hole mobility. The thin‐film transistors (TFTs) based on NdAlO3 thin film are integrated and exhibit typical p‐channel transistor behavior. The TFT based on NdAlO3 thin film annealed at 700 °C exhibits an optimized electrical performance, including a field‐effect mobility (µFE) of 0.19 cm2V−1s−1 and an on/off current ratio (Ion/Ioff) of ≈105. When high‐k Al2O3 dielectric is integrated into the TFTs, the µFE and Ion/Ioff are further improved to 9.93 cm2V−1s−1 and ≈106, respectively. The fabrication of a p–n junction based on p‐NdAlO3/n‐In2O3 heterojunction further confirms the excellent p‐type performance of the perovskite NdAlO3 thin films. This work not only demonstrates the possibility of p‐type perovskite NdAlO3 thin films applicable for transparent electronics, but also provides guidelines for the design of novel p‐type oxide semiconductors.

High Performance P-Type Perovskite Lagao3 Thin Film Field Effect Transistor Prepared by Solution-Processed

“…High annealing temperature (800 o C) provides enough heat energy, and LaGaO3 thin films transfer from amorphous state to polycrystalline state with a large number of grain boundaries [19] . The grain boundary is the defect and scattering center, which greatly affects the carrier transport [16] .…”

“…6a), and then annealed at 800 °C. The prepared Al2O3 dielectric thin film exhibits a large capacitance density (Ci) of about 97 nF cm -2 at 20 Hz [16]…”

“…In the current research report, thin film transistors using LaGaO3 thin film as semiconductor layer have not been studied. Recently, it has been reported that perovskite NdAlO3 thin films with excellent properties have been successfully prepared by solution method, and the integrated devices show good p-type semiconductor properties, which is realized by vacancy engineering [16] . This inspired us to explore the possibility of using sol gel method to prepare LaGaO3 thin films and integrate thin film transistors.…”

“…In this work, Al2O3 dielectric thin film was prepared by spin-coating Al(NO3)3 on the Si substrate (Fig.6a), and then annealed at 800 °C. The prepared Al2O3 dielectric thin film exhibits a large capacitance density (Ci) of about 97 nF cm -2 at 20 Hz[16] . The characteristic transfer curves of the TFTs based on LaGaO3 thin films annealed at 400-800 o C with Al2O3 dielectrics are shown in Fig.…”

Theoretical insights into the defect performance of the wide bandgap semiconductor BaS

“…[18][19][20] Very recently, perovskite-structured ABO 3 materials have received increasing attention due to their impressive multi-functionality. [21][22][23] Among them, alkaline earth stannate BaSnO 3 exhibits high optical transparency (with an optical gap of 3.1 eV) 24 and low carrier effective masses (electron effective masses of 0.2-0.4 m 0 ), 24,25 thus becoming a promising candidate for novel WBGSMs. 26 In this work, based on the hybrid functional method, we predict that, at room temperature (300 K), a higher electron density (exceeding 10 20 cm À3 ) can be realized in the WBGSM BaS.…”