Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity

Pattanasattayavong, Pichaya; Rossbauer, Stephan; Thomas, Stuart; Labram, John G.; Snaith, Henry J.; Anthopoulos, Thomas D.

doi:10.1063/1.4757602

Cited by 34 publications

(36 citation statements)

References 38 publications

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“…Zinc oxide (ZnO) has garnered much attention in recent years as a transparent n‐type semiconductor in applications ranging from thin‐film transistors (TFTs) for large area electronics, to ultraviolet (UV) and optical photodetectors with high transparency, to piezoelectric nanogenerators and strain sensors . While work has been carried out on high‐speed applications in the form of TFTs, little or no effort has been placed on utilizing ZnO in Schottky diodes.…”

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confidence: 99%

Radio Frequency Coplanar ZnO Schottky Nanodiodes Processed from Solution on Plastic Substrates

Semple

Rossbauer

Burgess

et al. 2016

Small

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Keywords: Schottky diode, radio frequency diodes, RFID, nanogap electrode, 13.56 MHz Main TextRadio Frequency Identification (RFID) is a rapidly growing technology used for wireless communication and the identification of objects in close proximity through radio waves. [1] Although already a billion dollar industry [2] , RFID technology promises substantial further growth by adopting fully printable processing routes. However, there remain several bottlenecks to be overcome before this opportunity can be realised, particularly pertaining to the high frequency performance of printable electronics.RFID tags are generally composed of a coupling element, or antenna, a direct current (DC) rectifier and integrated circuitry (IC). The rectifying element is by far the most important component in terms of high-frequency (HF) operation, as the logic may take place at much J. Semple et al., Small (2016), DOI: 10.1002/smll.201503110 2 lower frequencies than the RF base carrier frequency. Different frequency bands exist for different applications, though the current target for printable RFID is the widely employed 13.56 MHz band. [1] Conventionally, complementary metal-oxide-semiconductor (CMOS) technology favours the use of diode-connected metal-oxide-semiconductor field-effect transistors (MOSFETs) for rectification within this element. However, Schottky diodes, with their inherently lower voltage operation, lower series resistance and exponential currentvoltage relationship offer a superior choice for rectifiers. [4] There has been extensive work carried out in recent years to develop high frequency organic Schottky diodes following the pioneering work of Steudel et al. who demonstrated pentacene-based Schottky diode rectifiers operating at 50 MHz. [5] More recently C60-basedSchottky diodes with a cut-off frequency (fCO) up to 0.7 GHz have also been reported. [6] Diodes based on metal oxide materials (particularly In-Ga-Zn-O) have recently emerged as a promising material, demonstrating device performance up to and above 1 GHz. [7][8][9] Despite such promising results, manufacturing of these conventional staggered diodes relies on vacuum processing, which renders them incompatible with cost-effective large-volume product integration. To address this important bottleneck, recent work has been devoted to solutionprocessable organic diodes with adequate performance. [10][11][12] Si nanoparticles have recently been demonstrated as a potential route to solution processed diodes with cut-off frequencies as high as 1.6 GHz.[13] However, demonstrating high yield manufacturing of solution-processed diodes with cut-off frequency 50 MHz still remains a significant challenge.The operational frequency of Schottky diodes is inversely proportional to the product of the series resistance (RS) and junction capacitance (Cj). A common approach to boosting the device cut-off frequency is by reducing RS through the use of a high charge carrier mobility J. Semple et al., Small (2016) However, there are inherent problems with implementing...

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confidence: 99%

Radio Frequency Coplanar ZnO Schottky Nanodiodes Processed from Solution on Plastic Substrates

Semple

Rossbauer

Burgess

et al. 2016

Small

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“…However, it is unsuitable to be used as the active material alone, due to the relatively low light utilization and slow response speed. Pattanasattayavong et al introduced D102, an organic dye, to sensitize ZnO and to realize green‐light detection, and the phototransistors showed R of 10 4 A W −1 at 522 nm . They deemed that such a high R could be a result from the photogenerated electrons, transferred from the dye to ZnO, to fill the trap states, reduce the barrier height, and enhance the electron mobility.…”

Section: Performance Improvement Strategiesmentioning

confidence: 99%

Strategies toward High‐Performance Solution‐Processed Lateral Photodetectors

Lin

Wang

2019

Advanced Materials

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Since the device performance mainly depends on the active materials and device architectures, they are the subject of extensive work, and there have been many achievements. Dispersible inorganic materials vastly simplify the preparation of films while maintaining good electrical conductivity; [1][2][3][4][5] organic small-molecule materials and polymer materials have wide wavelength response, especially in visible region, and can be adjusted easily by changing the functional groups; [6][7][8][9][10] organic-inorganic hybrid material systems are also a promising development direction, combining good electrical and optical properties; [11][12][13][14][15] in addition, the perovskite series of organic-inorganic hybrid materials has become a new research direction due to their excellent optoelectronic properties. [16][17][18][19][20] In addition, varieties of microstructures including nanoparticles, nanowires, nanosheets etc., have been widely investigated, and they have a wide range of applications in devices benefiting from their peculiar characteristics, like quantum size effect and anisotropy. [21][22][23][24][25] Besides working on active materials, constructing diverse device architectures is also a convenient and effective approach. [26][27][28][29][30] The fabrication of blend, bilayer, and multilayer architectures would be conducive to increasing responsivity, extending detection range, and accelerating response speed.Here, from active materials to device architectures, we systematically introduce and discuss the strategies for improving the device performance of solution-processed lateral PDs. To begin with, we briefly expound the working mechanism of the lateral PDs and clarify the key device figures-of-merit. Then, based on the active materials, we divide the devices into four categories: inorganic, organic, hybrid, and perovskite, and their corresponding improvement methods are summarized respectively. To close, we conduct a physical generalization and propose detailed suggestions for the further development of the field. Device Working PrincipleThe structures of lateral PDs are quite simple: an active layer between two parallel electrodes or using three electrodes (source, drain, and gate) for better control; and the detection of light mainly originates from the change of conductivity, which is caused by the increase of the carrier concentration under illumination.Due to their low cost and ease of integration, solution-processed lateral photodetectors (PDs) are becoming an important device type among the PD family. In recent years, enormous effort has been devoted to improving their performances, and great achievements have been made. A summary of the core progress, especially from the perspective of design principles and device physics, is necessary to further the development of the field, but is currently lacking. Here, to address this need, first, the working mechanism of PDs and the device figures-of-merit are introduced. Second, by classifying the active materials into four categories, including in...

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“…In parallel, ZnO displays the n-type semiconductor with a direct band gap of ∼3.3 eV, which is suitable for the electron transport layer of a solar cell [1,3]. Currently, ZnO films are deposited by using the spin coating and spray pyrolysis methods, which consist of inexpensive and non-complex apparatus [6,7]. In contrast, the NiO films by these methods not only require a toxic precursor but also produce the porous film [8,9].…”

Section: Introductionmentioning

confidence: 99%

Investigation of NiO film by sparking method under a magnetic field and NiO/ZnO heterojunction

Tippo

Thongsuwan

Wiranwetchayan

et al. 2020

Mater. Res. Express

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Nickel oxide (NiO) film receives attention from the field of optoelectronics due to its wide band gap and high transparency. By using a sparking method, the deposition of the NiO film is facile and unique. However, the NiO film made by the sparking method indicates a porous surface with an agglomeration of its particles. In order to reduce the porousness of the NiO film, the assistance of a permanent magnet in the sparking apparatus is presented. Here, we report the investigation of the NiO film and the p-NiO/n-ZnO heterojunction deposited by the sparking method under a magnetic field. Our results demonstrate that the porosity of the NiO film was reduced by increasing the magnitude of a magnetic field from 0 mT to 375 mT. Furthermore, the crystallinity and the electrical properties of the NiO film are improved by the influent of a magnetic field. For heterojunction, the best device shows the rectification ratio of 95 and the ideality factor of 4.92. This work provides an alternative method for the deposition of the NiO film with promising applications in optoelectronic devices.

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Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity

Cited by 34 publications

References 38 publications

Radio Frequency Coplanar ZnO Schottky Nanodiodes Processed from Solution on Plastic Substrates

Radio Frequency Coplanar ZnO Schottky Nanodiodes Processed from Solution on Plastic Substrates

Strategies toward High‐Performance Solution‐Processed Lateral Photodetectors

Investigation of NiO film by sparking method under a magnetic field and NiO/ZnO heterojunction

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