Solution-processed Cu2CdSn(S,Se)4 thin film solar cells

Zhao, Wangen; Wang, Gang; Tian, Qingwen; Huang, Lizhen; Gao, Shang; Pan, Daocheng

doi:10.1016/j.solmat.2014.10.040

Cited by 62 publications

(39 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One of the possible approaches to suppress the formation of Cu Zn [ 61,62 ] however, Cu 2 CdSnS 4 retains p-type conductivity, [63][64][65] similar to that of Cu 2 ZnSnS 4 . This is not fully in accordance with our expectation.…”

Section: Solar Cellsmentioning

confidence: 99%

“…Indeed, the achieved effi ciency of Cu 2 CdSnS 4 -based solar cells is currently much lower than that of Cu 2 ZnSnS 4 -based solar cells. [ 64,69 ] After we fi nished the current work, we noticed a more recent study which shows that the solar cells based on Cu 2 Zn 1-x Cd x SnS 4 alloys with appropriate Zn/Cd ratio have an effi ciency up to 9.24%, while the effi ciency is decreased when the Cd content is high, [ 66 ] which can be understood according to our fi nding that high concentration of deep-level defects (recombination centers) exist in pure Cu 2 …”

Section: Solar Cellsmentioning

confidence: 99%

“…The valence band edges of Cu 2 CdSnS 4 , Cu 2 ZnSnS 4 , CuGaSe 2 , and CuInSe 2 are above or close to this level, so their Fermi level can be shifted to close to the valence band edge, i.e., high concentration of hole carriers (from ionized Cu Zn , Cu Cd , or V Cu ) and good p-type conductivity can be achieved in these semiconductors, in good agreement with the previous experimental observation. [21][22][23][24][25][63][64][65] Since the band energy has direct infl uence on the defect formation, its control becomes important for tuning the defect and electrical properties of the semiconductors. To control the band edge positions, we need to know the component of the band edge states, which can be seen in the calculated partial and total density of states as shown in Figure 7 .…”

Section: Infl Uence Of Band Edge Position On Defect Formationmentioning

confidence: 99%

See 2 more Smart Citations

Engineering Solar Cell Absorbers by Exploring the Band Alignment and Defect Disparity: The Case of Cu‐ and Ag‐Based Kesterite Compounds

Yuan

Chen

Xiang

et al. 2015

Adv Funct Materials

295

362

View full text Add to dashboard Cite

Section: Solar Cellsmentioning

confidence: 99%

Section: Solar Cellsmentioning

confidence: 99%

Section: Infl Uence Of Band Edge Position On Defect Formationmentioning

confidence: 99%

See 1 more Smart Citation

Engineering Solar Cell Absorbers by Exploring the Band Alignment and Defect Disparity: The Case of Cu‐ and Ag‐Based Kesterite Compounds

Yuan

Chen

Xiang

et al. 2015

Adv Funct Materials

295

362

View full text Add to dashboard Cite

“…We hypothesize that the Cd substitution will lead to multiple benefi ts. [ 23,24 ] This is usually considered as the main reason for the Cu Zn and Zn Cu antisite defects in CZTS system. [17][18][19] Second, as the enthalpy of formation of ZnS is particularly negative, this may be the main reason for narrow single-phase region and accompanying secondary phases in CZTS structure.…”

Section: Doi: 101002/aenm201500682mentioning

confidence: 99%

Cation Substitution of Solution‐Processed Cu₂ZnSnS₄ Thin Film Solar Cell with over 9% Efficiency

Tan

et al. 2015

Advanced Energy Materials

314

315

View full text Add to dashboard Cite

To alleviate the limitations of pure sulfide Cu2ZnSnS4 (CZTS) thin film, such as band gaps adjustment, antisite defects, secondary phase and microstructure, Cadmium is introduced into CZTS thin film to replace Zn partially to form Cu2Zn1−xCdxSnS4 (CZCTS) thin film by low‐cost sol–gel method. It is demonstrated that the band gaps and crystal structure of CZCTS thin films are affected by the change in Zn/Cd ratio. In addition, the ZnS secondary phase can be decreased and the grain sizes can be improved to some degree by partial replacement of Zn with Cd in CZCTS thin film. The power conversion efficiency of CZTS solar cell device is enhanced significantly from 5.30% to 9.24% (active area efficiency 9.82%) with appropriate ratio of Zn/Cd. The variation of device parameter as a function of Zn/Cd ratio may be attributed to the change in electronic structure of the bulk CZCTS thin film (i.e., phase change from kesterite to stannite), which in turn affects the band alignment at the CZCTS/buffer interface and the charge separation at this interface.

show abstract

“…Device structure [22]. Absorber prepared by spin-coating an ethanol, butyldithiocarbamic acid, and thioglycolic acid -based solution.…”

Section: Methodsmentioning

confidence: 99%

Emerging inorganic solar cell efficiency tables (Version 1)

et al. 2019

View full text Add to dashboard Cite

This paper presents the efficiency tables of materials considered as emerging inorganic absorbers for photovoltaic solar cell technologies. The materials collected in these tables are selected based on their progress in recent years, and their demonstrated potential as future photovoltaic absorbers. The first part of the paper consists of the criteria for the inclusion of the different technologies in this paper, the verification means used by the authors, and recommendation for measurement best practices. The second part details the highest world-class certified solar cell efficiencies, and the highest non-certified cases (some independently confirmed). The third part highlights the new entries including the record efficiencies, as well as new materials included in this version of the tables. The final part is dedicated to review a specific aspect of materials research that the authors consider of high relevance for the scientific community. In this version of the Efficiency tables, we are including an overview of the latest progress in theoretical methods for modeling of new photovoltaic absorber materials expected to be synthesized and confirmed in the near future. We hope that this emerging inorganic Solar Cell Efficiency Tables (Version 1) paper, as well as its future versions, will advance the field of emerging photovoltaic solar cells by summarizing the progress to date and outlining the future promising research directions. Abbreviations Eff. (%)Conversion efficiency obtained under AM1.5 illumination in percentageOpen circuit voltage in Volts J SC (mA cm −2 ) Short circuit current in mili-Ampers by square centimeter F. F. (%) Fill factor in percentage E g (eV) Bandgap in electronvolt AZO ZnO:Al ITO In 2 O 3 :SnO 2 Spiro-OMeTAD 2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (C 81 H 68 N 4 O 8 ) TBAI Tetrabutylammonium iodide OPEN ACCESS RECEIVED

show abstract

Solution-processed Cu2CdSn(S,Se)4 thin film solar cells

Cited by 62 publications

References 38 publications

Engineering Solar Cell Absorbers by Exploring the Band Alignment and Defect Disparity: The Case of Cu‐ and Ag‐Based Kesterite Compounds

Engineering Solar Cell Absorbers by Exploring the Band Alignment and Defect Disparity: The Case of Cu‐ and Ag‐Based Kesterite Compounds

Cation Substitution of Solution‐Processed Cu₂ZnSnS₄ Thin Film Solar Cell with over 9% Efficiency

Emerging inorganic solar cell efficiency tables (Version 1)

Contact Info

Product

Resources

About

Solution-processed Cu2CdSn(S,Se)4 thin film solar cells

Cited by 62 publications

References 38 publications

Engineering Solar Cell Absorbers by Exploring the Band Alignment and Defect Disparity: The Case of Cu‐ and Ag‐Based Kesterite Compounds

Engineering Solar Cell Absorbers by Exploring the Band Alignment and Defect Disparity: The Case of Cu‐ and Ag‐Based Kesterite Compounds

Cation Substitution of Solution‐Processed Cu2ZnSnS4 Thin Film Solar Cell with over 9% Efficiency

Emerging inorganic solar cell efficiency tables (Version 1)

Contact Info

Product

Resources

About

Cation Substitution of Solution‐Processed Cu₂ZnSnS₄ Thin Film Solar Cell with over 9% Efficiency