Solution processed copper zinc tin sulfide thin films for thermoelectric device applications

Gunavathy, K. V.; Tamilarasan, K.; Rangasami, C.; Arulanantham, A. M. S.

doi:10.1016/j.ceramint.2020.07.338

Cited by 8 publications

(7 citation statements)

References 92 publications

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“…This replacement enables band gap tuning, which makes it a versatile semiconducting material to be used in various applications. Despite the vast knowledge acquired in the past two decades on CZTS fabrication and properties, , thermoelectricity in CZTS thin films has been scarcely explored . Several studies have been done in improving the thermoelectric properties of CZTS.…”

Section: Introductionmentioning

confidence: 99%

Facile and Low-Cost Fabrication of Cu/Zn/Sn-Based Ternary and Quaternary Chalcogenides Thermoelectric Generators

Syafiq

Isotta

Ataollahi

et al. 2022

ACS Appl. Energy Mater.

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In this work, Cu/Zn/Sn-based ternary and quaternary chalcogenides inks were synthesized via hot injection and/or from ball-milled powders. The synthesized inks were used to fabricate thermoelectric generators (TEGs) based on p-type chalcogenide and n-type aluminum-doped zinc oxide (AZO) thin films via spin-coating and magnetron sputtering, respectively. This work highlights the first-ever attempt in a facile and scalable method to fabricate thin-film TEGs using safe, low-cost, and abundant materials. Four different TEGs were fabricated using Cu 2 ZnSnS 4 (CZTS), Cu 2 ZnSnSe 4 (CZTSe), Cu 2.125 Zn 0.875 SnS 3 Se (CZTSSe), and Cu 2 SnS 3 (CTS) chalcogenides. Thermoelectric transport analysis confirmed the respective p-and n-type natures of the chalcogenides and AZO, with their Seebeck coefficients compatible to be coupled in a p−n device. In addition, a full-device analysis has been carried out, and several factors affecting the performance of TEGs were investigated, including the composition, density, and presence of secondary phases in chalcogenide thin films. The maximum power per unit active planar area obtained for CZTS, CZTSe, CZTSSe, and CTS TEGs at a temperature difference (ΔT) of 160 K was ∼43, ∼188, ∼23, and ∼59 nW/cm 2 , respectively, making CZTSe/AZO TEG the champion device. KEYWORDS: thermoelectric generator (TEG), thin film, Cu 2 ZnSn(S/Se) 4 (CZTS/Se), Cu 2 SnS 3 (CTS), aluminium-doped zinc oxide (AZO)

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Section: Introductionmentioning

confidence: 99%

Facile and Low-Cost Fabrication of Cu/Zn/Sn-Based Ternary and Quaternary Chalcogenides Thermoelectric Generators

Syafiq

Isotta

Ataollahi

et al. 2022

ACS Appl. Energy Mater.

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“…In recent years, CZTS in bulk form has been investigated for high temperature thermoelectric (TE) applications [14][15][16][17][18][19][20] . Little has been explored regarding thermoelectricity in CZTS thin films, despite the vast knowledge acquired in the past two decades on their fabrication [21][22][23] . TE energy conversion exploits the Seebeck effect, the development of a voltage gradient in a material as a consequence of an applied temperature difference 24 .…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric properties of CZTS thin films: effect of Cu–Zn disorder

Isotta

Syafiq

Ataollahi

et al. 2021

Phys. Chem. Chem. Phys.

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“…Air is used as a carrier gas to produce ne droplets of the aerosol. The growth conditions were optimized to give better quality lms [31]. The temperature was maintained at 350°C during deposition.…”

Section: Preparation Of Czts Thin Lmsmentioning

confidence: 99%

Enhancing The Optoelectronic Properties of Nebulizer Sprayed In2S3 Thin Films For Photodetector Applications

Lavanyaa¹,

Kumar²,

Gunavathy

et al. 2021

Preprint

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In the present work, the versatile Indium sulfide thin films (In2S3) are deposited on glass substrates using nebulizer assisted spray pyrolysis technique at 350 °C for visible light detection application. The effect of the molar concentration of indium and sulfur on the structure, morphology, optical characteristics, and photo-sensing capability of the prepared In2S3 films were systematically studied in the range of 0.01 M to 0.03 M. The structural analysis showed a maximum crystallite size of 36 nm for 0.03 M sample. The morphological image from the scanning electron microscope showed a homogeneous large size grained surface of In2S3 film completely covering the substrate. The indium to the sulfur ratio in the prepared films ranged from 1.02 to 1.16 as the molar concentration was raised from 0.01 to 0.03 M. All the prepared films showed a good absorption in the ultraviolet and visible region of the electromagnetic spectra. The sample prepared at 0.03 M was found to have a minimum band gap of 2.38 eV and a maximum PL intensity at 480 nm. The I-V characteristics show a photocurrent of 1.4 × 10-5 A under visible light for an external bias voltage of ± 5 V. A maximum responsivity of 2.74 A/W, detectivity of 2.65 × 1010 Jones was exhibited by 0.03 M sample with a high EQE of 63.9 %. The prepared In2S3 thin film may find application as a photodetector.

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Solution processed copper zinc tin sulfide thin films for thermoelectric device applications

Cited by 8 publications

References 92 publications

Facile and Low-Cost Fabrication of Cu/Zn/Sn-Based Ternary and Quaternary Chalcogenides Thermoelectric Generators

Facile and Low-Cost Fabrication of Cu/Zn/Sn-Based Ternary and Quaternary Chalcogenides Thermoelectric Generators

Thermoelectric properties of CZTS thin films: effect of Cu–Zn disorder

Enhancing The Optoelectronic Properties of Nebulizer Sprayed In2S3 Thin Films For Photodetector Applications

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