2015
DOI: 10.1039/c4tc02816c
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Solution processed CdTe/CdSe nanocrystal solar cells with more than 5.5% efficiency by using an inverted device structure

Abstract: CdTe/CdSe nanocrystal (NC) solar cells with an inverted structure (ITO/ZnO/CdSe/CdTe/Au) have been successfully fabricated by a simple solution process coupled with layer-by-layer sintering techniques. It was found that the device performance is strongly dependent on the annealing strategy, the thickness of the acceptor layer and on the buffer layer of ZnO when the optimal thickness of CdTe is adopted. Without the ZnO buffer layer, a thin film of the CdSeNCs on an ITO substrate shows a rougher morphology, resu… Show more

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Cited by 41 publications
(43 citation statements)
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References 33 publications
(67 reference statements)
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“…ZnO precursor and CdTe NCs were prepared by the method reported in previous works [23,24]. CdS NCs were fabricated by a non-injection method (CdS NC is formed gradually during the reaction) using tetraethylthiuram disufide and 2,2 -dithiobisbenzothiazole as nucleation initiators [38].…”
Section: Synthesis Methodsmentioning
confidence: 99%
“…ZnO precursor and CdTe NCs were prepared by the method reported in previous works [23,24]. CdS NCs were fabricated by a non-injection method (CdS NC is formed gradually during the reaction) using tetraethylthiuram disufide and 2,2 -dithiobisbenzothiazole as nucleation initiators [38].…”
Section: Synthesis Methodsmentioning
confidence: 99%
“…The thickness of the ZnSe NC buffer layer and the annealing temperature have great impact on the performance of NC solar cells, as shown in Figure 2e, f. To compare device performance with different thicknesses of ZnSe NC, all the samples are prepared at the same conditions and annealed at 350 • C with CdCl 2 treatment after five layers of CdTe NC are deposited. We found that the J sc increases from 3.58 mA/cm 2 to 10.35 mA/cm 2 when ZnSe thickness increases from 25 nm to 110 nm and decreases to 5.61 mA/cm 2 at 125 nm, which is significantly lower than the thickness among CdTe/CdSe or CdTe/CdS NC solar cells [10,19]. By contrast, the thickness of the ZnSe NC buffer layer has significant effects on the V oc , FF (fill factor), and PCE of NC solar cells.…”
Section: Resultsmentioning
confidence: 89%
“…The ZnO precursor and CdTe NCs synthesis is similar to methods reported previously [10]. ZnSe NCs were fabricated by using the hot injection method with ZnO as a precursor [30,31].…”
Section: Nanocrystal (Nc) Synthesismentioning
confidence: 99%
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“…They demonstrated minimal differences in film morphology and device performance in devices fabricated by using toxic salt of cadmium chloride or non-toxic salt of NH 4 Cl. More recently, Qin et al [59] developed a novel inverted device structure of ITO/ZnO/CdSe/CdTe/Au. This devices structure has many benefits.…”
Section: Cdte/cdse Ncs Heterojunction Solar Cellsmentioning
confidence: 99%