Solution-Processed Amorphous In–Zn–Sn Oxide Thin-Film Transistor Performance Improvement by Solution-Processed Y<sub>2</sub>O<sub>3</sub>Passivation

Bukke, Ravindra Naik; Avis, Christophe; Jang, Jin

doi:10.1109/led.2016.2528288

Cited by 42 publications

(50 citation statements)

References 16 publications

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“…In Figure 4d, 20% Ga-doped IZTO exhibits the µs at of 8.23 cm 2 V −1 s −1 , V th of 0.54 V, an SS of 169 mV dec −1 , and I on /I off of 0.50 × 10 7 . [6] Our results suggest that higher M-O bond concentration reduces the defect concentration. The improvements in the µs at and SS are due to less density of traps at the IZTO/gate insulator interface.…”

Section: Resultsmentioning

confidence: 59%

“…Higher M-O concentration reveals that fewer defects at the interface. [6] Our results suggest that at the interfaces, and especially at/near the interface of 30 s plasma-treated Ga-doped IZTO/AlO x where the channel region is formed, higher M-O leads to reduce the defect density. Figure 5e-h shows the output curves of Ga-doped ITZO TFTs having the current levels in the saturation region of 24, 49, 18, and 20 µA for 0, 30, 60, and 120 s ArO 2 plasmatreated Ga-doped IZTO TFT, respectively.…”

Section: Wwwadvelectronicmatdementioning

confidence: 62%

“…The improvements in the µs at and SS are due to less density of traps at the IZTO/gate insulator interface. [6,17,21,22] In Figure 4e-h, the output curves of Ga-doped IZTO TFTs show the saturation current levels of 13, 20, 24, and 15 µA for 0%, 5%, 10%, and 20% of Ga, respectively. [6] Our results suggest that higher M-O bond concentration reduces the defect concentration.…”

Section: Resultsmentioning

confidence: 99%

“…In Figure 5d, a 120 s Ar/O 2 plasma-treated 10% Ga-doped IZTO TFTs exhibits the µs at of 11.60 cm 2 V −1 s −1 , V th of 0.24 V, an SS of 150 mV dec −1 , and I on /I off of 1.71 × 10 7 . [6] Figure 5i-k shows the summary of V th , µs at , and SS for 0, 30, 60, and 120 s Ar/O 2 plasma-treated 10% Ga-doped IZTO TFTs, respectively. Note that 30 s Ar/O 2 plasma-treated 10% Ga-doped IZTO TFTs show the best TFT performance due to fewer traps at the surface as well as at/near the interface.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…[1] The TFTs can be fabricated via a solution process [2][3][4][5][6][7] or vacuum process. [1] The TFTs can be fabricated via a solution process [2][3][4][5][6][7] or vacuum process.…”

Section: Introductionmentioning

confidence: 99%

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Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O₂ Plasma Treatment

Mude

Bukke

Saha

et al. 2019

Adv Elect Materials

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their high optical transparency and high mobility. The undoped InO x and ZnO have a crystalline structure with high carrier concentration. [23] Therefore, many attempts are carried out to improve TFT performance by using multi-component metal-oxides. [24][25][26][27][28][29][30][31][32] IGZO is a widely used metal-oxide because of its amorphous structure and relatively high mobility. [8,32] The mixing of two or more cations with different sizes and ionic charges is tried for amorphous phase with suppressing crystallization and carrier concentration. [24] The incorporation of an appropriate quantity of cations is required to form the substitutional doping and strong chemical bonding with oxygen ions for stable oxide TFTs. [25] The ionic radius and metal-oxygen bonding strength are the most critical parameters to improve the mobility and stability of metal oxide TFTs. To enhance the bias stability of oxide TFT, carrier suppressors such as Ga 3+ , Gd 3+ , La 3+ , Sc 3+ , and Y 3+ can be used. Ga can be a good choice due to its lower ionic radius (62 pm) and relatively strong bonding strength with oxygen (353.5 kJ mol −1 ). [33] The selection of an appropriate percentage of carrier suppressor is a vital parameter to control the carrier concentration. But, excess doping can modify the material structure, which leads to deteriorating device performance. Ga is used for IGZO, indium-gallium oxide (IGO), [26] and indium-gallium-zinc-tin oxide (IGZTO), [27] so that we selected Ga doping in IZTO to improve mobility and stability. The solution-processed alloyed form of the oxide TFTs fabricated using In-Ga-O, [26] indium-zinc oxide (In-Zn-O), [28] indiumzinc-tin oxide (In-Zn-Sn-O), [29] aluminum-doped indium zinc tin oxide (Al-In-Zn-Sn-O), [30] zinc tin oxide (Zn-Sn-O), [31] and indium gallium zinc oxide (In-Ga-Zn-O) [32] as an active channel material have been widely studied for the high performance of the solution based oxide TFTs. To increase mobility, various treatments were carried out such as heat-treatment [34] and plasma-treatment. [35][36][37] In this study, we report the Ar/O2 plasma treatment effect on the performance of Ga-doped IZTO TFT. First, we improve the performance of the a-IZTO TFT by varying the Ga doping ratio from 0 to 20%. It is found that 10% Ga-doped IZTO shows the best performance. To further improve the TFT performance, the Ar/O 2 plasma treatment was carried out. The carbon concentration at the surface of Ga-doped IZTO could be reduced by Ar/O 2 plasma treatment, which is confirmed from the XPS The effects of gallium doping into indium-zinc-tin oxide (IZTO) thin film transistors (TFTs) and Ar/O 2 plasma treatment on the performance of a-IZTO TFT are reported. The Ga doping ratio is varied from 0 to 20%, and it is found that 10% gallium doping in a-IZTO TFT results in a saturation mobility (µs at ) of 11.80 cm 2 V −1 s −1 , a threshold voltage (V th ) of 0.17 V, subthreshold swing (SS) of 94 mV dec −1 , and on/off current ratio (I on /I off ) of 1.21 × 10 7 . Additionally, the performance of 10% G...

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Section: Resultsmentioning

confidence: 59%

Section: Wwwadvelectronicmatdementioning

confidence: 62%

Section: Resultsmentioning

confidence: 99%

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…[1] The TFTs can be fabricated via a solution process [2][3][4][5][6][7] or vacuum process. [1] The TFTs can be fabricated via a solution process [2][3][4][5][6][7] or vacuum process.…”

Section: Introductionmentioning

confidence: 99%

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Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O₂ Plasma Treatment

Mude

Bukke

Saha

et al. 2019

Adv Elect Materials

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Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

He,

Zhu

et al. 2023

Adv Funct Materials

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Metal oxide field‐effect transistors (MOFETs) represent a promising technology for applications in existing but alsoemerging large‐area electronics. Simultaneously, the rise of 1D nanomaterials with unique properties, represented by nanofibers (NFs), has also energized research. Thus, developing 1D nanofiber networks (NFNs) to act as the potential building blocks for use in fundamental elements of transistors is considered to be a promising approach torealize high‐performance 1D electronics. However, high processing temperatures and disordered nanofiber distribution represent two remaining technical challenges. Here, electrospun highly aligned IGZO (a‐IGZO) nanofiber arrays with low‐thermal‐budget of 350 °C and impressive device characteristics are achieved, including a μFE of 5.63 cm2 V–1 s–1 and superior on/off current ratio of ≈107. When ALD‐derived high‐k HfAlOx thin films are employed as gate dielectrics, the source/drain voltage (VDS) can be substantially reduced by ten times to a range of only 03 V, along with a three times improvement in mobility to a respectable value of 15.9 cm2 V–1 s–1. Successful integrations of logic operation, sensor, and flexible devices implies the potential prospect of a‐IGZO NFN FETs in multifunctional electronics. The strategy for combining cryogenic processes and parallel arrays provides a feasible and reliable route in building future low‐power, high‐performance flexible electronics.

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High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

Bukke

Mude

Saha

et al. 2019

Adv Materials Inter

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been widely used as the active semiconductor materials for the oxide TFTs. For example, amorphous indium-zinc-tin oxide (a-IZTO) as an active layer on high-k dielectric material such as aluminum oxide (AlO x ), [42][43][44] zirconium oxide (ZrO x ), [45][46][47][48] hafnium oxide (HfO x ), [49] zirconium-doped aluminum oxide (ZAO), [50] and lanthanum doped zirconium oxide (LaZrO x ) [51] have been used for solution process. The purpose of using a high-κ gate insulator is for the low voltage driven oxide TFTs.The oxide TFT could be annealed at a higher temperature (>500 °C) [52] to improve its performance and stability, but higher annealing temperature prevents the use of the plastic substrate for the flexible display. [53] Also, various process technologies are developed to improve the film quality, for example, Ar/O 2 plasma treatment, [54] O 2 annealing, [55] and UV ozone treatment. [56] Many of the previous reports have focused on the thin-film quality and lowering fabrication process temperature by using the UV treatment [57] or combustion method. [58] Moreover, to address present-day microelectronics challenges, the synthesis of high-quality semiconductor precursor solution is essential for high performance, oxide TFTs at low processing temperatures.In this study, we report the impact of metal oxide precursor purification on the performance of TFTs. Smooth surface morphology and the high-quality interface between a-IZTO and ZrO x are confirmed by atomic force microscopy (AFM) and X-ray photoelectron spectroscopic (XPS) analysis, respectively. The mobility, ON/OFF current ratio, gate voltage swing (SS), and hysteresis of the purified a-IZTO TFTs are significantly improved compared to the TFTs using unpurified precursor solutions. The hysteresis and positive bias-stress stability of the transfer curve for the purified a-IZTO TFTs are improved as a result of the reduced interface charge trapping. Therefore, the purification of the oxide semiconductor is an essential step for high performance, solution processed oxide TFTs.

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Solution-Processed Amorphous In–Zn–Sn Oxide Thin-Film Transistor Performance Improvement by Solution-Processed Y₂O₃Passivation

Cited by 42 publications

References 16 publications

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O₂ Plasma Treatment

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O₂ Plasma Treatment

Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

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Solution-Processed Amorphous In–Zn–Sn Oxide Thin-Film Transistor Performance Improvement by Solution-Processed Y2O3Passivation

Cited by 42 publications

References 16 publications

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O2 Plasma Treatment

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O2 Plasma Treatment

Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

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Solution-Processed Amorphous In–Zn–Sn Oxide Thin-Film Transistor Performance Improvement by Solution-Processed Y₂O₃Passivation

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O₂ Plasma Treatment

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O₂ Plasma Treatment