Solution‐Processed AgSbS₂ Thin Films for Photodetection

Abstract

Ternary chalcogenide, silver antimony sulfide (AgSbS2), has emerged with great potential for optoelectronic applications, thanks to its excellent optical properties, facile processability and superior stability. However, high‐performance AgSbS2‐based photodiodes have not been realized mainly due to the large dark current caused by the poor morphology and device leakage. Here, compact AgSbS2 and porous AgSbS2 thin films are fabricated mainly via modulating the sol–gel processes of the precursors. After optimizing the Ag content and the thermal annealing temperature of the AgSbS2 films, AgSbS2 photodiodes with excellent performance metrics, including low dark current density, decent specific detectivity, and superior stability, are achieved. Furthermore, the optimized AgSbS2‐based photodetectors are also introduced for heart rate detection, which exhibit excellent sensitivity and great potential for real applications.

Ultrafast and broadband photodetection based on selenized AgSbS2 thin films prepared by spray pyrolysis deposition and modified with indium nitrate

“…[27][28][29][30] While single-phase AgSbS 2 thin lms can be easily prepared via solution methods such as spin-coating and spray pyrolysis, their large band gap (direct and indirect band gaps are 1.64 eV and 1.49 eV, respectively) results in weak responses in the long-wave range (>900 nm). 31,32 On the other hand, AgSbSe 2 with a lower direct band gap (1.0-1.1 eV) exhibits a much broader detection range. 33 AgSbSe 2 has a signicantly narrow indirect band gap of about 0.58-0.64 eV, indicating that the photodetectors could have a possibility to detect longer wavelength infrared radiation up to 2 mm.…”

Enhanced Charge Carrier Mobility of Evaporated Sb2Se3 via Post‐Treatment for High‐Speed Photodetection

“…Flexible devices have also been fabricated on PET, which could be used for pulse heart rate monitoring. [ 34,35 ] In the meantime, due to the relatively small number of crystal defects in the nanoscale, Sb 2 Se 3 nanowires have also been applied in photodetectors, and the polarization sensitivity has been realized by utilizing the orientation of one‐dimensional materials. [ 36 ] Narrowband chalcogenide‐based photodetectors have also been fabricated for the discrimination of different colors imaging with various device structures.…”