“…Layered two-dimensional (2D) transition metal dichalcogenides (TMDCs) with intriguing behavior in the atomically thin regime, such as surfaces free of dangling bonds and a controllable band gap, have attracted great interest since silicon technology was pushed to the limits as a result of device scales progressively shrinking. − As one of the most extensively studied TMDCs, molybdenum disulfide (MoS 2 ) is regarded as an ideal channel material for electronic and optoelectronic devices owing to its indirect-to-direct band gap transition, high carrier mobility, and environmental stability. − Nevertheless, the natural propensity of n-type MoS 2 attributed to unavoidable sulfur vacancy defects restricts its versatility and potential in complex applications. Therefore, it is crucial for both fundamental research and applications to effectively manipulate the band structure and majority carrier type of MoS 2 and further enrich its properties. , Over the past few years, significant efforts have been invested in various approaches, such as plasma treatment, − charge transfer doping by surface adsorbates, , substitutional doping, − etc.…”