Solution processable Si/Ge heterostructure NWs enabling anode mass reduction for practical full-cell Li-ion batteries

Abstract

Here, we report the solution phase synthesis of axial heterostructure Si and Ge (hSG) nanowires (NWs). The NWs were grown in a high boiling point solvent from a low-cost Sn...

Real-Time TEM Observation of the Role of Defects on Nickel Silicide Propagation in Silicon Nanowires

“…The high-resolution TEM image of the Si NW after annealing (Figure S8c–f) reveals the presence of a high density of planar defects including twin boundaries and stacking faults. Planar defects require low formation energy, which is typically 28 mJ m –2 (22 meV/bond) to form twin defects in Si NWs and is half the energy to form stacking faults. − These planar defects are often generated in seeded NWs grown via vapor or solution phase, which can be linked to the inherent instability of the metal seeds and growth conditions. − Furthermore, the Si NW sample exhibited variations in diameter along its lengths (Figure S9). This nonuniform growth process of the NW may also lead to structural defects, contributing to the high distribution of planar defects in the NW .…”

“… 35 − 37 These planar defects are often generated in seeded NWs grown via vapor or solution phase, which can be linked to the inherent instability of the metal seeds and growth conditions. 38 − 43 Furthermore, the Si NW sample exhibited variations in diameter along its lengths ( Figure S9 ). This nonuniform growth process of the NW may also lead to structural defects, contributing to the high distribution of planar defects in the NW.…”