Solution‐Processable, Low‐Voltage, and High‐Performance Monolayer Field‐Effect Transistors with Aqueous Stability and High Sensitivity

Incorporating the intriguing covalent organic framework (COF) into devices and performing their advanced electronic nature are still challenging. Herein, we demonstrate the direct growth of 2D full-conjugated COF ultrathin films on dielectric hexagonal boron nitride (hBN) for the first time and study the carrier transporting characteristics of π-conjugated COF films. Under the optimized solvothermal conditions, few-layered COF-366 films with the covalent connection of tetra(p-aminophenyl)porphyrin and terephthaladehyde are selectively fabricated on mechanically exfoliated hBN flakes. COF-366 films on hBN substrate present red-shift absorption edge and decreased band gap compared to the bulk COF powders.The organic field-effect transistor device based on COF-366 ultrathin films demonstrates p-type current modulation with an On/Off ratio of 10 5 and mobility of 0.015 cm 2 V -1 s -1 . The present work represents a universal method for COF film growth on dielectric surface, and also provides important insight to the carrier transport of 2D π-conjugated system and potential applications of 2D COFs in electronics.

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“…32 HfO 2 coated on silicon substrate was prepared according to previous work. 35 After annealing at 500 …”

Section: Selective Growth Of Cof-366 Film On Hbnmentioning

confidence: 99%

Selective Growth of Covalent Organic Framework Ultrathin Films on Hexagonal Boron Nitride

Sun

Dong

et al. 2016

J. Phys. Chem. C

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“…[10][11][12][13][14][15][16] On the other hand, ultrathin film (< 15 nm, Figure 1a) of organic semiconductors represents a kind of nano-scale film consisting of monolayer to few molecular layers (Figure 1b). [17][18][19][20][21][22][23] 3 According to the surface morphology, ultrathin film includes continuous and microstructured film (Figure 1a), both of which provide excellent platform for fundamental researches and practical applications. [24][25][26][27][28][29][30] For example, in organic field-effect transistors (OFETs), the charge transporting layer (conductive channel) is located at the interface between semiconductors and dielectrics, and its thickness is only about one to several nm, i.e., one to several molecular layers.…”

Section: Introductionmentioning

confidence: 99%

Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors

Zhang

et al. 2016

Langmuir

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Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.

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“…This agrees with previous reports that the semiconducting performance in FETs is primarily dominated by the first few layers near the dielectric layer. [10][11][12][13][14][15] Adv. Electron.…”

Section: Thin Film Field-effect Transistorsmentioning

confidence: 99%

“…[10][11][12][13][14][15] Moreover, downscaling the film thickness to a single molecular layer is of technological interest for the realization of bottomup electronic devices. [16][17][18] In particular, monolayer organic FETs (OFETs) are beneficial for sensing applications as the binding of the respective analytes with the semiconducting monolayer is expected to affect the charge transporting.…”

mentioning

confidence: 99%

Diketopyrrolopyrrole‐Based Semiconducting Polymer with Both Hydrophobic Alkyl and Hydrophilic Tetraethylene Glycol Chains for Monolayer Transistor and Sensing Application

Yang

Zhang

Chen

et al. 2017

Adv Elect Materials

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studies also suggest that the first few layers of organic/polymeric semiconductors play key roles in determining the performances of FETs. [10][11][12][13][14][15] Moreover, downscaling the film thickness to a single molecular layer is of technological interest for the realization of bottomup electronic devices. [16][17][18] In particular, monolayer organic FETs (OFETs) are beneficial for sensing applications as the binding of the respective analytes with the semiconducting monolayer is expected to affect the charge transporting. [19][20][21][22][23] Consequently, such sensors with monolayer FETs can show high sensitivity and fast response.Various approaches have been explored to fabricate FETs with ultrathin semiconducting films. These include unconventional spin-coating and formation of self-assembly monolayer on surface. [24][25][26][27][28] Langmuir deposition method is known to enable the realization of monolayers at the air/liquid interface with precision control over the molecule lateral packing density. In fact, Langmuir technique was successfully utilized to transfer monolayer thin films of organic and polymeric semiconductors onto the substrates to fabricate FETs. [29][30][31][32][33][34][35] For instance, Yli-Lahti and co-workers first reported FETs with Langmuir-Blodgett (LB) films of poly(3-hexylthicphene)/ arachidic acid, but the resulting FETs exhibited rather low charge mobilities. [34] This is probably due to the fact that the LB films contain arachidic acid which is required for the formation of the polymer LB films at air-water interface. Facchetti and Pignataro and co-workers prepared n-type monolayer FET with naphthalene diimide based polymer (P (NDI2OD-T2)) by using Langmuir-Schaefer method. [35] These conjugated polymers are basically hydrophobic, but it is known that amphiphilic molecules with both hydrophobic and hydrophilic moieties can form more ordered monolayers at the air-water interface. [36][37][38] Leclerc and co-workers studied the formation of LB monolayers at air-water interface and the transfer of the monolayers onto the substrate for the conjugated polymer with both alkyl and oligo(ethylene glycol) side chains, but the semiconducting properties of the monolayers were not addressed. [38] Functional field-effect transistors (FETs) have received increasing attention in recent years. Herein, it is demonstrated that the incorporation of hydrophilic tetraethylene glycol (TEEG) chains into the diketopyrrolopyrrole (DPP)-based semiconducting polymer (PDPP3T1) can facilitate the formation of polymeric monolayer at the air-water interface, and the resulting field-effect transistors (FETs) show sensitive and selective response toward alcohol vapor. By using the Langmuir-Schaefer method, monolayer and ultrathin films from bilayer to five-layer can be successfully prepared. Interestingly, nanopores with sizes of 50-100 nm are formed within the monolayer film, as observed by using atomic force microscopy. The monolayer FET exhibits relatively high hole mobilities up to 0.014 cm 2 V −1 s −...

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Solution‐Processable, Low‐Voltage, and High‐Performance Monolayer Field‐Effect Transistors with Aqueous Stability and High Sensitivity

Cited by 100 publications

References 42 publications

Selective Growth of Covalent Organic Framework Ultrathin Films on Hexagonal Boron Nitride

Selective Growth of Covalent Organic Framework Ultrathin Films on Hexagonal Boron Nitride

Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors

Diketopyrrolopyrrole‐Based Semiconducting Polymer with Both Hydrophobic Alkyl and Hydrophilic Tetraethylene Glycol Chains for Monolayer Transistor and Sensing Application

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