Solution Phase Synthesis of Indium Gallium Phosphide Alloy Nanowires

Abstract

The tunable physical and electronic structure of III-V semiconductor alloys renders them uniquely useful for a variety of applications, including biological imaging, transistors, and solar energy conversion. However, their fabrication typically requires complex gas phase instrumentation or growth from high-temperature melts, which consequently limits their prospects for widespread implementation. Furthermore, the need for lattice matched growth substrates in many cases confines the composition of the materials to a narrow range that can be epitaxially grown. In this work, we present a solution phase synthesis for indium gallium phosphide (In(x)Ga(1-x)P) alloy nanowires, whose indium/gallium ratio, and consequently, physical and electronic structure, can be tuned across the entire x = 0 to x = 1 composition range. We demonstrate the evolution of structural and optical properties of the nanowires, notably the direct to indirect band gap transition, as the composition is varied from InP to GaP. Our scalable, low-temperature synthesis affords compositional, structural, and electronic tunability and can provide a route for realization of broader In(x)Ga(1-x)P applications.

SnP nanocrystals as anode materials for Na-ion batteries

“…Particularly challenging has been the synthesis of phosphides of main group metals such as Ga, In, Ge and Sn. [43][44][45][46][47][48][49] In the past, various synthetic approaches of tin phosphides were developed. [23][24][25][26][27][28][29][30][31][32][33][34] As an example, 200 nm Sn 4 P 3 particles were synthesized in solution using tin(II) acetylacetonate and trioctylphosphine (TOP), and used as SIB anode reaching a capacity of 719.8 mA h g -1 in the initial cycle.…”

Solution‐Liquid‐Solid Synthesis of Hexagonal Nickel Selenide Nanowire Arrays with a Nonmetal Catalyst

“…Analogous to the VLS process, SLS also needs catalyst droplets to catalyze the growth of nanowires, but it is a low‐temperature route (<300 °C) and cost‐effective, which opens up a new possibility to control the growth of nanowires in solution . In SLS processes, low‐melting‐point metals, such as In, Sn, or Bi, are usually applied as liquid catalysts to grow nanowires, the shape and size of which influence the diameter of the grown nanowires . However, after the SLS growth process, etching treatment is required to remove the metal catalysts so that pure nanowires can be obtained.…”

Metallic indium spheres by the anaerobic ethanol oxidation of indium oxide

“…Indium (In) plays a crucial role in many applications including a very well-known conductive indium tin oxide (ITO), III-V semiconductor alloys (e.g., InP, GaIn, and InAs), electronics, and catalysis [1][2][3][4][5][6]. In has potential applications to many organic syntheses, which include the regioselective allylation of alkynes, selective reductions, and homocoupling reaction of alkyl and aryl halides [5,6].…”