Solution-phase synthesis and photoluminescence characterization of quaternary Cu[sub 2]ZnSnS[sub 4] nanocrystals

Hamanaka, Yasushi; Tsuzuki, Masakazu; Ozawa, Kohei; Kuzuya, Toshihiro

doi:10.1063/1.4848256

Cited by 1 publication

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“…Moreover, in the case of polycrystalline semiconductors, local disorder at grain boundaries causes a significant density of electronic states (tails states) within the band-gap energy [20,40,41]. Several PL studies performed on CZTS have shown that at low temperature the spectra are dominated by a broad and asymmetric band centered at around 1.2-1.3 eV as reported for single crystals [24,27,42,43], polycrystals [28,44,45], thin films [31,34,[46][47][48][49], monograin powders [50,51], and nanocrystals [52]. No agreement exists concerning the nature of involved states and also on the nature of the radiative transitions.…”

Section: Introductionmentioning

confidence: 94%

Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case ofCu2ZnSnS4

Teixeira

Sousa

et al. 2014

Phys. Rev. B

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The theoretical models of radiative recombinations in both CuIn 1−x Ga x Se 2 chalcopyrite and Cu 2 ZnSnS 4 kesterite, and related compounds, were revised. For heavily doped materials, electrons are free or bound to large donor agglomerates which hinders the involvement of single donors in the radiative recombination channels. In this work, we investigated the temperature and excitation power dependencies of the photoluminescence of Cu 2 ZnSnS 4 -based solar cells in which the absorber layer was grown through sulphurization of multiperiod structures of precursor layers. For both samples the luminescence is dominated by an asymmetric band with peak energy at ∼1.22 eV, which is influenced by fluctuating potentials in both conduction and valence bands. A value of ∼60 meV was estimated for the root-mean-square depth of the tails in the conduction band. The radiative transitions involve the recombination of electrons captured by localized states in tails of the conduction band with holes localized in neighboring acceptors that follow the fluctuations in the valence band. The same acceptor level with an ionization energy of ∼280 meV was identified in both absorber layers. The influence of fluctuating potentials in the electrical performance of the solar cells was discussed.

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