Solution growth technique for iron copper sulphide ternary thin film and its optical characteristics

Abstract

Ternary thin films of Iron Copper Sulphide were grown on glass substrate using cheap and simple solution growth technique with EDTA, TEA and NH 3 as complexing agents. The deposited films were characterized using PYE-UNICO-UV-2102 PC Spectrophotometer and optical microscopy. The optical properties considered revealed high absorbance and reflectance but low transmittance in the UV; low values of absorbance and reflectance accompanied with high transmittance in the VIS. Over all, the absorptive coefficient ranged from 0. , the extinction coefficient ranged from 0.005 to 0.038, its direct band gap ranged from 2.4eV to 2.8eV, the indirect band gap ranged from 0.6eV to 1.0eV and its complex dielectric constant from (1.4 + j 0.005) to (5.2 + j 0.136). These properties suggest that the films are suitable for solar cell applications.

Influence of Silar Cycle on The Energy Bandgap of Iron Copper Sulphide (FeCuS) Thin Films Deposited on SLG Substrate

“…The film shows relatively low absorbance in the NIR regions of the spectrum (less than 1.0). This is in consonance with the reports of [2,4,8] as they also observed high absorbance in the UV region and low absorbance in the VIS-NIR region.…”

“…As shown on the graph, average transmittance at wavelength (λ) = 800 nm was found to be between 80% and 90%. These values of fairly low and high transmittances in UV and VIS-NIR regions respectively are in agreement with previous researchers [2,4,8,9]. The results further revealed the utilization of the materials in solar cell.…”

“…It is observed that the band gap values decreased as the SILAR cycle increased. There is an obvious contrast between the range of these direct band gap values and the results of previous researchers [2][3][4]8]. The values obtained were found to be higher than previous researchers which could be attributed to the variation in the molar concentrations of the precursors used, the deposition time, and impurities from the environment where the research was conducted.…”

“…Many researchers have succeeded in depositing iron copper sulphide (FeCuS) thin films using chemical bath deposition (CBD) [2,3] and solution growth technique (SGT) [4]. A successive ionic layer adsorption and reaction solid thin films on the substrates and the ammonia solution to stabilize the pH of the mixtures.…”

Nanocrystalline Lead Sulphide Thin Films Deposited by Chemical Bath Deposition Technique

“…Lead sulphide (PbS) is an important direct narrow gap semiconductor material with an approximate energy band gap of 0.4 eV at 300K [6][7][8]. This band gap is very suitable for infrared detection applications and can be enhanced by decreasing the size of the crystallites [9,10].…”