Solution-Based PbS Photodiodes, Integrable on ROIC, for SWIR Detector Applications

Heves, Emre; Öztürk, Cem; Ozguz, V.; Gürbüz, Yaşar

doi:10.1109/led.2013.2253756

Cited by 29 publications

(12 citation statements)

References 10 publications

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“…In particular, polycrystalline lead salts represent an attractive option for monolithic on-chip mid-IR detector integration up to 5 μm. They can be deposited on Si in a non-epitaxial manner via thermal evaporation or solution processing [186][187][188]. They also epitomize a class of semiconductors whose polycrystalline form rivals or even outperforms their single crystalline counterparts for IR detection, a unique feature owing to spatial separation of charge carriers near grain boundaries and hence long photo-carrier lifetime [189,190].…”

Section: Inmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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Section: Inmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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“…Recent studies demonstrated that larger diameter QDs are characterized by lower absorption coefficients making it harder to achieve high EQE values further in the IR region. [12,13] In the state of the art, two types of PbS-based detectors are dominant for the short-wave infrared wavelength region, namely photoconductors [14,15] and photodiodes [16][17][18] . Photoconductors rely on amplification gain and suffer from low response speed which makes them inappropriate for megahertz imaging.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Charge Carrier Extraction in Colloidal Quantum Dots Short‐Wave Infrared Photodiodes through Optical Engineering

Georgitzikis

Malinowski

Maes

et al. 2018

Adv Funct Materials

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Colloidal quantum dots (QDs) have attracted scientific interest for infrared optoelectronic devices due to their bandgap tunability and ease of fabrication on arbitrary substrates. In this work, we demonstrate short wave infrared photodetectors based on lead sulfide (PbS) QDs with high detectivity and low dark current. Using a combination of time-resolved photoluminescence, carrier transport and capacitance-voltage measurements, we prove that the charge carrier diffusion length in the QD layer is negligible, such that only photogenerated charges in the space charge region can be collected. To maximize the carrier extraction, we develop an optical model for PbS QD based photodiodes and through optical engineering we optimize the cavity at the wavelength of our choice. This universal optimization recipe is applied to detectors sensitive to wavelengths above 1.4 m, leading to external quantum efficiency (EQE) of 30% and specific detectivity (D*) in the range of 10 12 Jones.

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“…vity is defined by photocurrent (I p = I light − I d ) divided by the incident power (P) to the active area. The shot noise, associated with current fluctuations flowing across a PD, often dominates the total noise of the detector 36. So, I n could be approximately correlated with I d described by I n ¼…”

mentioning

confidence: 99%

Growth, patterning and alignment of organolead iodide perovskite nanowires for optoelectronic devices

et al. 2015

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Organolead halide perovskites are becoming intriguing materials applied in optoelectronics. In the present work, organolead iodide perovskite (OIP) nanowires (NWs) have been fabricated by a one step self-assembly method. The controllable NW distributions were implemented by a series of facile techniques: monolayer and small diameter NWs were prepared by precursor concentration tuning; NW patterning was achieved via selected area treatment assisted by a mask; NW alignment was implemented by modified evaporation-induced self-assembly (EISA). The synthesized multifunctional NWs were further applied in photodetectors (PDs) and solar cells as application demos. The PD performances have reached 1.32 AW(-1) for responsivity, 2.5 × 10(12) Jones for detectivity and 0.3 ms for response speed, superior to OIP films and other typical inorganic NW based PD performances. An energy conversion efficiency of ∼2.5% has been obtained for NW film based solar cells. The facile fabrication process, controllable distribution and optoelectronic applications make the OIP NWs promising building blocks for future optoelectronics, especially for low dimensional devices.

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Solution-Based PbS Photodiodes, Integrable on ROIC, for SWIR Detector Applications

Cited by 29 publications

References 10 publications

Mid-infrared integrated photonics on silicon: a perspective

Mid-infrared integrated photonics on silicon: a perspective

Optimization of Charge Carrier Extraction in Colloidal Quantum Dots Short‐Wave Infrared Photodiodes through Optical Engineering

Growth, patterning and alignment of organolead iodide perovskite nanowires for optoelectronic devices

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