Solubility of Carbon in Silicon and Germanium

Abstract

The solubility of carbon in silicon has been measured over the temperature range 1560 to 2900°C. The enthalpy of solution is 59±3 kcal/mole. A phase diagram for the system Si–C is presented, embodying these solubility data as well as the results of other high-temperature experiments with silicon carbide. It is found that SiC possesses a peritectic point at 2830±40°C. These studies were carried out in argon at pressures as high as 35 atmos. Solubilities of carbon in germanium were measured in the temperature range 2780 to 3170°C, at argon pressures up to 55 atmos, and a tentative phase diagram is given.

Time and Temperature Dependence of the Solubility of Carbon in Liquid Silicon Equilibrated with Silicon Carbide and Its Dependence on Boron Levels

“…9) The work of Durand and Duby is a review article based on the data of Kleykamp and Schumacher; 10) Hall;5) and Dash. 11,12) As was pointed out by Søiland,13) their published equation gives a higher solubility at 1414 C than any of the publications on which they base their review.…”

Carbon Dissolution Occurring during Graphite–Ferrosilicon Interactions at 1550°C

“…[3][4][5][6] Other studies [7][8][9][10][11] had conducted extensive work on the solubility of carbon in siliconrich alloys.…”

Chemical Vapour Deposition of CNTs Using Structural Nanoparticle Catalysts

“…This suggests that the C implant might increase the Ge melting point through formation of a Ge 1−y C y alloy. This hypothesis is supported by the phase diagram of the Ge-C system presented by Scace & Slack (1959), which indicates that the presence of a small percentage of C has a strong effect in raising the melting point of Ge. Furthermore, Kanazawa et al (2001) demonstrate that Ge 1−y C y alloys can be successfully formed by C implantation into Ge.…”