Solubility limits and phase structures in epitaxial ZnOS alloy films grown by pulsed laser deposition

Raman scattering quantitative assessment of the anion composition ratio in Zn(O,S) layers for Cd-free chalcogenide-based solar cells

“…[9][10][11] Raman scattering analysis of Zn(O,S) solid solutions has already been reported in ref. [12][13][14][15]. These previous works showed the existence of a 2-mode behavior characteristic of the solid solution with the observation of two main peaks corresponding to the ZnO-like peak (located at 574 cm À1 in ZnO) and the ZnS-like peak (located at 351 cm À1 in ZnS).…”

The S concentration dependence of lattice parameters and optical band gap of a-plane ZnOS grown epitaxially on r-plane sapphire

“…have already emerged. In the meanwhile, the replacement of O by S in ZnO to form ZnO 1Àx S x alloys has been investigated [11][12][13][14]. The relationship between the band gap and the substituent (sulfur) fraction for ZnO 1Àx S x is quite different from that for MgZnO or CdZnO.…”

“…The band gap of MgZnO (CdZnO) increases (decreases) almost monotonically with increasing Mg (or Cd) fraction [15,16]. However, with small amount of sulfur incorporation into ZnO the valence band offset increases strongly and the band gap becomes narrower [13,17]. When the fraction of S reaches about 50%, the band gap of ZnO 1Àx S x narrows down to a minimum at $2.6 eV [11].…”

Bandgap-controlled non-equilibrium ZnO1−xSx thin films grown by pulsed laser deposition method

“…Furthermore, single phase ZnO 0.5 S 0.5 is difficult to fabricate [7][8][9][10][11]. He et al reported fabricating the ZnO 1 − x S x alloy films on c-plane sapphire substrates by controlling the oxygen partial pressure with deposition temperature of 750°C [12]. However, the composition of ZnO 1 − x S x is limited with 0 ≤ x ≤ 0.2.…”