Solubility dependent trap density in poly (3-hexylthiophene) organic Schottky diodes at room temperature

Chaudhary, Vidhi; Kumar, Naresh; Singh, Arun Kumar

doi:10.1016/j.synthmet.2019.03.006

Cited by 19 publications

(12 citation statements)

References 35 publications

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“…We have chosen 1,2-dichlorobenzene (DCB) as the solvent for P3HT because of its high dipole moment (2.27 D) as compared to other common organic solvents. 27 Cross-sectional schematics and a ready to characterize three-terminal redox-electrolyte device are shown in Figures 2d and 2e, respectively. The electrolyte drop thickness was measured as ∼2.4 μm by using a profilometer as shown in Figure S2c,d.…”

Section: Resultsmentioning

confidence: 99%

“…Also, the crystallinity of thin films with help of self-assembling of P3HT chains and backbones depends on the dipole moment of the solvent used. We have chosen 1,2-dichlorobenzene (DCB) as the solvent for P3HT because of its high dipole moment (2.27 D) as compared to other common organic solvents . Cross-sectional schematics and a ready to characterize three-terminal redox-electrolyte device are shown in Figures d and e, respectively.…”

Section: Results and Discussionmentioning

confidence: 99%

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Unconventional Redox-Active Gate Dielectrics To Fabricate High Performance Organic Thin-Film Transistors

Sagar

Dey

Das

2019

ACS Appl. Electron. Mater.

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The fabrication of solution-processed organic thin-film transistors (OTFTs) is the cleanest root for the development of green and eco-friendly disposable technologies as a crucial need of human society in the future. Therefore, P3HT polymer based OTFTs are demonstrated here with mobility as high as 8.0 cm2/(V·s) by using an unconventional solid–electrolyte layer containing the redox-active ionic compound ethyl viologen diperchlorate (EV(ClO4)2) as the gate dielectric. A suitable negative gate bias produces a carrier density higher than 1015 holes/cm2 resulting from a reversible redox exchange reaction between EV2+ and P3HT present in the electrolyte and channel, respectively, other than the field effect and electrochemical doping. Anonymous high current (I G) between source and gate has been observed which is actually the redox-exchange current to produce large carrier density, which solely controls the operation of the transistors at very low operating voltage. A large specific capacitance (Ci = 7.1 μF/cm2) of the redox-electrolyte layer facilitates the OTFTs to operate below 1.5 V with bulk conductivity up to ∼194 S/cm and sheet conductance 40 μS/area. Our OTFT devices exhibit high reproducibility in performance and better devices parameters, including subthreshold swings down to 177 mV/dec and current ON/OFF ratios up to 107.

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Section: Resultsmentioning

confidence: 99%

Section: Results and Discussionmentioning

confidence: 99%

Unconventional Redox-Active Gate Dielectrics To Fabricate High Performance Organic Thin-Film Transistors

Sagar

Dey

Das

2019

ACS Appl. Electron. Mater.

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“…The selection of CH 2 Cl 2 instead of the most commonly employed chloroform (CHCl 3 ) as organic solvent was motivated by: i) the need to avoid the formation of oxidative species during the ultrasonication of H 2 O/CHCl 3 mixture that can react with conjugated polymers, [ 17 ] and ii) an improved aggregation and self‐assembly tendency of P3HT films when processed from CH 2 Cl 2 . [ 49 ]…”

Section: Resultsmentioning

confidence: 99%

Effect of Different Ionic Surfactants on the Structural, Photophysical, and Morphological Properties of Water‐Based P3HT:PCBM Nanoparticle Dispersions and Films

Bellacanzone

Prosa

Muccini

et al. 2020

Part & Part Syst Charact

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Aqueous suspensions of composite nanoparticles of poly(3‐hexylthiophene) (P3HT) and [6,6]‐phenyl C61 butyric acid methyl ester (PCBM) are fabricated by miniemulsion method using three different ionic surfactants. The aim is to study how the length and conformation of the surfactants alkyl chains affect the properties of the nanoparticles. While the morphology and dimensions of the nanoparticles are similar, UV–vis spectroscopy evidences that the internal aggregation and ordering of the P3HT chains varies within the three nanoparticle formulations. The surfactant with branched alkyl chains promote the highest degree of ordering of P3HT chains in the nanoparticles (leading to increased conjugation length). In contrast, the lowest ordering is found for the nanoparticles with the surfactant having the shortest linear alkyl chain. The optical/structural properties of nanoparticles are partially retained in the films. Besides, the surfactant with branched alkyl chains favors the strongest coalescence of nanoparticles in the thin film, promoting a further ordering of the polymeric chains in the most external shell of the nanoparticles as evidenced by steady‐state and time‐resolved UV–vis spectroscopy and confocal fluorescence microscopy. These findings might guide the engineering of new surfactants for composite nanoparticles for optoelectronic applications.

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“…In the 3rd region, as the application voltage increases, all trap levels in the band gap of the semiconductor layer are filled. This suggests that most of traps are filled and contribution of free carrier to electric filed becomes appreciable (Kumar, Jain et al 2003, Yakuphanoglu 2008, Chaudhary, Kumar et al 2019. In Figure 6a and b, graphs of resistivity and conductivity versus temperature are given at a constant potential, respectively.…”

Section: Electrical Propertiesmentioning

confidence: 96%

Investigation Of Some Optical And Electrical Properties Of InSe Thin Film, a Window Layer for Photovoltaic Cell Growth on Glass/GaSe Substrate by M-CBD Method

ÜNAL

2021

Karadeniz Fen Bilimleri Dergisi

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The InSe thin film was successfully grown on a glass/GaSe substrate using the modified chemical bath deposition (M-CBD) method and a group was annealed one hour at 80 °C in atmospheric conditions. The energy band gap ( ) values of the as-deposited and annealed films were defined 1,89 eV and 1,15 eV, respectively. The transmitance values (%) of the as-deposited and annealed films were asigned %0.65, %4.46 and %11,02, %10,35 at 400 and 700 nm, respectively. The I-V characteristics of the device at different temperatures was examined, the resistivity decreased and the conductivity increased with the increasing temperature. The activation energy in low temperature region was defined 0,05 eV, while it was defined 0.6 eV in high temperature region.

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Solubility dependent trap density in poly (3-hexylthiophene) organic Schottky diodes at room temperature

Cited by 19 publications

References 35 publications

Unconventional Redox-Active Gate Dielectrics To Fabricate High Performance Organic Thin-Film Transistors

Unconventional Redox-Active Gate Dielectrics To Fabricate High Performance Organic Thin-Film Transistors

Effect of Different Ionic Surfactants on the Structural, Photophysical, and Morphological Properties of Water‐Based P3HT:PCBM Nanoparticle Dispersions and Films

Investigation Of Some Optical And Electrical Properties Of InSe Thin Film, a Window Layer for Photovoltaic Cell Growth on Glass/GaSe Substrate by M-CBD Method

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