Solidly mounted bulk acoustic wave filters for the GHz frequency range

Loebl, H.P.; Metzmacher, C.; Peligrad, D.-N.; Mauczok, R.; Klee, M.; Brand, Willi A.; Milsorn, R.F.; Lok, P.; Straten, R. Van; Tuinhout, A.; Lobeek, J.-W.

doi:10.1109/ultsym.2002.1193546

Cited by 25 publications

(11 citation statements)

References 13 publications

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“…This is due to their small footprint, high Q-factor, high operating frequency, and relatively good power handling. [240][241][242][243] Due to the size and rapidly evolving requirements of the commercial smartphone market, filters used in commercial wireless devices have become lower cost and more compact, and possess improved filter response. This has led to greater overlap in both the requirements and characteristics of filters between commercial smartphones and military Department of Defense (DoD) systems.…”

Section: Electromechanical Filtersmentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

998

463

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Section: Electromechanical Filtersmentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

998

463

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“…SAW duplexers are tested as well to have a good comparison to the various BAW duplexers. FBAR is used as the naming for the bridge-type technology [2], whereas BAW is used for the SMR-devices [3][4][5][6] (see Fig. 1a, b).…”

Section: Measurement Results (Duplexer)mentioning

confidence: 99%

“…Currently two realizations for the BAW technology can be found worldwide: bridge-type [2] and mirror-type [3][4][5][6] or solidly-mounted-resonator (SMR) BAW resonators. Whereas the former is very much related to MEMS (micro-electromechanical-system), see Fig.…”

Section: Short Review Of Baw Technologiesmentioning

confidence: 99%

Nonlinear effects in acousto-electric devices

Schmidhammer¹

2008

2008 4th European Conference on Circuits and Systems for Communications

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This work deals with the nonlinear behavior of acoustoelectric components. Besides the well known surface acoustic wave (SAW) components also bulk acoustic wave (BAW) devices are meanwhile used in the RF front-end of mobile phones. Especially duplexers have to face the challenge of handling high-power Tx signals together with low-power Rx signals. In order to investigate the nonlinear behavior of such devices single resonators are studied in detail first. Increasing the resonator area by means of cascading lowers the power density on the surface and allows for lower input intercept points of second and third order, IIP2 and IIP3. This investigation gives a first proposal about how to improve current available BAW duplexers. In advance SAW and BAW duplexers of various vendors are measured and compared to each other with respect to their IIP2 and IIP3 values for the very first time. These measurements have been performed at the 3GPP Band II frequency band, which has the same frequency allocation (Tx: 1850 -1910 MHz, Rx: 1930 -1990 MHz) like the IS-95 system.

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“…Accurate resonators with high Q-factor can be implemented by piezo-electric resonators like Surface Acoustic Wave (SAW) [2] resonators, Bulk Acoustic Wave (BAW) resonators [7] and Lamb Wave Resonators (LWR) [8]. In general, the model of Fig.3 is used to model a piezo-electric resonator around its fundamental resonance frequency.…”

Section: Characteristics Of Piezo-electric Resonatorsmentioning

confidence: 99%

Design of electronic control circuit of piezo-electric resonators for ΣΔ modulator loop in AMS Bi-CMOS 0.35µm

Javidan

Bénabès

2010

Proceedings of the 8th IEEE International NEWCAS Conference 2010

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Most of the recent design methodologies of continuous-time sigma-delta modulators use piezo-electric resonators as loop filters. Compared with classical resonators (Gm-c, Gm-LC and etc), piezo-electric resonators have the advantage of high quality factor and accurate resonance frequency. However, they suffer from anti-resonance frequency and impedance adaptation issues with connected electronic circuits. Therefore, their performance is in practice deteriorated. Compatible electronic control circuit is required to achieve expected performance. In this study, the specifications of the electronic control circuit are studied and this circuit is designed in AMS Bi-CMOS 0.35µm technology. the simulations are done at layout-level.

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Solidly mounted bulk acoustic wave filters for the GHz frequency range

Cited by 25 publications

References 13 publications

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Nonlinear effects in acousto-electric devices

Design of electronic control circuit of piezo-electric resonators for ΣΔ modulator loop in AMS Bi-CMOS 0.35µm

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Solidly mounted bulk acoustic wave filters for the GHz frequency range

Cited by 25 publications

References 13 publications

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Nonlinear effects in acousto-electric devices

Design of electronic control circuit of piezo-electric resonators for &#x03A3;&#x0394; modulator loop in AMS Bi-CMOS 0.35&#x00B5;m

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Design of electronic control circuit of piezo-electric resonators for ΣΔ modulator loop in AMS Bi-CMOS 0.35µm