Solidification temperature of silicon surface layer melted by pulsed laser irradiation

Ивлев, Г. Д.; Gatskevich, E. I.

doi:10.1016/s0169-4332(98)00906-4

Cited by 27 publications

(20 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As the temperature decreases below the solidification temperature, the rate at which atoms can jump from liquid to solid decreases monotonically, but the probability that this event occurs increases monotonically. The overall rate of crystal growth is given by [20] v…”

Section: Nucleation Events In Undercooled Liquid Siliconmentioning

confidence: 99%

See 1 more Smart Citation

Modelling of flash-lamp-induced crystallization of amorphous silicon thin films on glass

Smith¹,

McMahon²,

Voelskow

et al. 2005

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: Nucleation Events In Undercooled Liquid Siliconmentioning

confidence: 99%

“…Using given data [20], we obtain the rate of velocity of the solid-liquid interface against undercooling given in Fig. 7.…”

Section: Nucleation Events In Undercooled Liquid Siliconmentioning

confidence: 99%

Modelling of flash-lamp-induced crystallization of amorphous silicon thin films on glass

Smith¹,

McMahon²,

Voelskow

et al. 2005

Journal of Crystal Growth

View full text Add to dashboard Cite

“…In the model the fourfold symmetry of interface energy is assumed but both are in good agreement when the upper envelope of the experimental data is concerned. The values of linear kinetic coefficient for h100i and h111i faces of silicon have been obtained by numerical simulations 28,29) or experiments, [30][31][32] and most of the data for a (100) face of silicon are in the range from 0.2 to 0.05 m/sK. The value of linear kinetic coefficient for a Si-6 mass%Ni alloy is reported to be 0.01 m/sK 33) and it is supposed to becomes small with increase of solute content because the driving force for solute partition at interface would be necessary.…”

Section: Methodsmentioning

confidence: 99%

Faceted Crystal Growth of Silicon from Undercooled Melt of Si-20 mass%Ni Alloy

2007

View full text Add to dashboard Cite

Two-dimensional faceted crystal growth of silicon from undercooled melt of Si-20 mass%Ni alloy was experimentally investigated, in which a droplet sample from 10 to 100 mg was undercooled on a single-crystal sapphire and growing crystals were observed in situ. Observed crystals were classified according to the shapes of square, wedge and irregular shapes. The growth velocity was measured for different undercooling conditions. The growth velocity of square shaped crystals was about half times smaller than that of wedge shaped crystals. The growth of square shaped crystals is regarded to be two-dimensional and it is compared with the results of two-dimensional phase-field simulations. Growth velocity in both is in good agreement and the linear kinetic coefficient is estimated to be 0.002 m/sK.

show abstract

“…As described above the growth velocity of a /1 0 0S dendrite is smaller than that of a /2 1 1S dendrite and the results are is in agreement with experiments. The values of linear kinetic coefficient for /1 0 0S and /1 1 1S faces of silicon have been obtained by numerical simulations [35,36] or experiments [37][38][39], and most of the data for a (1 0 0) face of silicon are in the range from 0.2 to 0.05 m/s K. The value of linear kinetic coefficient for silicon alloys is not reported but it is supposed to be smaller than that of silicon because the driving force for solute partition at interface would be additionally necessary. Therefore the value of linear kinetic coefficient used in the simulation is acceptable, and the agreement between simulations and experiment show that the conditions in the simulations have been appropriately assumed.…”

Section: Dendrite Growth Velocitymentioning

confidence: 99%

Faceted dendrite growth of silicon from undercooled melt of Si–Ni alloy

Kuniyoshi

Ozono

Ikeda

et al. 2006

Science and Technology of Advanced Materials

View full text Add to dashboard Cite

Two-dimensional faceted dendrite growth of silicon from undercooled melt of Si-6 wt%Ni alloy was experimentally investigated, in which molten alloy film from 10 to 20 mm in thickness was undercooled up to 115 K and growing dendrites were observed in situ. Both the in situ observation of dendrite morphology and the EBSP crystallographic analysis for solidified samples showed that both a /2 1 1S twin dendrite and a /1 0 0S twin-free dendrite grew in the range of undercooling from 50 to 115 K. Dendrite growth velocity was also measured for different undercooling conditions. The growth velocity of /2 1 1S dendrites was slightly larger than that of /1 0 0S dendrites. It is concluded that the upper envelope of the data provide the correct dendrite growth velocity and it is compared with that obtained by phase-field simulations. Growth velocity in both follows power relationships to undercooling and the linear kinetic coefficient is estimated to be 0.01 m/s K. r

show abstract

Solidification temperature of silicon surface layer melted by pulsed laser irradiation

Cited by 27 publications

References 14 publications

Modelling of flash-lamp-induced crystallization of amorphous silicon thin films on glass

Modelling of flash-lamp-induced crystallization of amorphous silicon thin films on glass

Faceted Crystal Growth of Silicon from Undercooled Melt of Si-20 mass%Ni Alloy

Faceted dendrite growth of silicon from undercooled melt of Si–Ni alloy

Contact Info

Product

Resources

About