Solid-state thermionics and thermoelectrics in the ballistic transport regime

Humphrey, T. E.; O'Dwyer, M. F.; Zhang, Chaofeng; Lewis, R. A.

doi:10.1063/1.1977191

Cited by 26 publications

(11 citation statements)

References 10 publications

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“…In the diffusive limit the Landauer formalism describes TE devices and in the ballistic limit, TI devices. 16 > , which is consistent with the result by Humphrey et al 12 The physical explanation is that the short d of TI device gives a large heat back-flow that limits max T ∆ .…”

Section: Introductionsupporting

confidence: 91%

On momentum conservation and thermionic emission cooling

Kim

Jeong

Lundstrom

2010

Journal of Applied Physics

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The question of whether relaxing momentum conservation can increase the performance of thermionic cooling device is examined. Both homojunctions and heterojunctions are considered. It is shown that for many cases, a non-conserved lateral momentum model overestimates the current. For the case of heterojunctions with a much heavier effective mass in the barrier and with a low barrier height, however, non-conservation of lateral momentum may increase the current. These results may be simply understood from the general principle that the current is limited by the location, well or barrier, with the smallest number of conducting channels. These results also show that within thermionic emission framework, the possibilities of increasing thermionic cooling by relaxing momentum conservation are limited. More generally, however, when the connection to the source is weak or in the presence of scattering, the situation may be different. Issues that deserve further study are identified.Comment: 36 pages, 1 table, 9 figure

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Section: Introductionsupporting

confidence: 91%

On momentum conservation and thermionic emission cooling

Kim

Jeong

Lundstrom

2010

Journal of Applied Physics

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“…At 1 THz, a relevant difference of the peak values can be observed, confirmed by the comparison of the Figures 7 and 9 introduced below. The author assumes this effect as due to the increase of mobility, considered by TCAD as an effect of ballistic behavior of carriers [15,16]. The internal distribution of the photovoltage generated by the self-mixing effect is reported in Figure 5a, obtained from the model respectively at frequencies of 300 GHz, 1 THz, and 3 THz.…”

Section: Model Resultsmentioning

confidence: 99%

Self-Mixing Model of Terahertz Rectification in a Metal Oxide Semiconductor Capacitance

Palma

2020

Electronics

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Metal oxide semiconductor (MOS) capacitance within field effect transistors are of great interest in terahertz (THz) imaging, as they permit high-sensitivity, high-resolution detection of chemical species and images using integrated circuit technology. High-frequency detection based on MOS technology has long been justified using a mechanism described by the plasma wave detection theory. The present study introduces a new interpretation of this effect based on the self-mixing process that occurs in the field effect depletion region, rather than that within the channel of the transistor. The proposed model formulates the THz modulation mechanisms of the charge in the potential barrier below the oxide based on the hydrodynamic semiconductor equations solved for the small-signal approximation. This approach explains the occurrence of the self-mixing process, the detection capability of the structure and, in particular, its frequency dependence. The dependence of the rectified voltage on the bias gate voltage, substrate doping, and frequency is derived, offering a new explanation for several previous experimental results. Harmonic balance simulations are presented and compared with the model results, fully validating the model’s implementation. Thus, the proposed model substantially improves the current understanding of THz rectification in semiconductors and provides new tools for the design of detectors.

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“…11 predict a slowdown of the decrease of the parallel capacitance value and an increase of the conductance. We assume that this effect is due to the ballistic behavior of electrons through the double barrier [22,23]. This effect, which eventually implies an improvement of the rectification capability, deserves an Fig.…”

Section: Nep Evaluationmentioning

confidence: 96%

CMOS-Compatible Room-Temperature Rectifier Toward Terahertz Radiation Detection

Varlamava

Amicis²,

Monte³

et al. 2016

J Infrared Milli Terahz Waves

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In this paper, we present a new rectifying device, compatible with the technology of CMOS image sensors, suitable for implementing a direct-conversion detector operating at room temperature for operation at up to terahertz frequencies. The rectifying device can be obtained by introducing some simple modifications of the charge-storage well in conventional CMOS integrated circuits, making the proposed solution easy to integrate with the existing imaging systems. The rectifying device is combined with the different elements of the detector, composed of a 3D high-performance antenna and a charge-storage well. In particular, its position just below the edge of the 3D antenna takes maximum advantage of the high electric field concentrated by the antenna itself. In addition, the proposed structure ensures the integrity of the charge-storage well of the detector. In the structure, it is not necessary to use very scaled and costly technological nodes, since the CMOS transistor only provides the necessary integrated readout electronics. On-wafer measurements of RF characteristics of the designed junction are reported and discussed. The overall performances of the entire detector in terms of noise equivalent power (NEP) are evaluated by combining low-frequency measurements of the rectifier with numerical simulations of the 3D antenna and the semiconductor structure at 1 THz, allowing prediction of the achievable NEP.

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Solid-state thermionics and thermoelectrics in the ballistic transport regime

Cited by 26 publications

References 10 publications

On momentum conservation and thermionic emission cooling

On momentum conservation and thermionic emission cooling

Self-Mixing Model of Terahertz Rectification in a Metal Oxide Semiconductor Capacitance

CMOS-Compatible Room-Temperature Rectifier Toward Terahertz Radiation Detection

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