Solid-state synthesis, structural variants and transformation of three-dimensional sulfides, AGaSnS4 (A=Na, K, Rb, Cs, Tl) and Na1.263Ga1.263Sn0.737S4

Syntheses and characterization of one-dimensional alkali metal antimony(III) thiostannates(IV), A2Sb2Sn3S10 (A=K, Rb, Cs)

“…We previously reported [8,14] the synthetic and structural studies of nine quaternary sulfides of A/Cd/Sn/S (A¼Li, Na) and A/Ga/Sn/S (A¼alkali metal, Tl) systems. Na 2 CdSnS 4 , Na 6 CdSn 4 S 12 and Li 2 CdSnS 4 compounds are found to contain Cd 2 þ and Sn 4 þ ions in both tetrahedral and octahedral coordinations.…”

Layered and Cubic Semiconductors AGaM′Q4 (A+ = K+, Rb+, Cs+, Tl+; M′4+ = Ge4+, Sn4+; Q2– = S2–, Se2–) and High Third-Harmonic Generation

“…14 For the composition CsGaSnS 4 , the cubic polymorph was assumed, but no structural data was reported. 17 In this work we managed to not only successfully grow crystals and provide data for the cubic phase CsGaSnS 4 -cP84 (17) but also isolate and characterize the orthorhombic modification CsGaSnS 4 -oP56 (7). Similarly, for the previously reported KGaSnSe 4 , 19 the new cubic polymorph KGaSnSe 4 -cP84 (14) was assumed to exist but could not be isolated or characterized.…”

“…A similar situation was also observed for the compounds TlGaSnQ 4 (9, 10, 16, and 17), which crystallize in the cubic AGaM′Q 4 -cP84 as well as the layered monoclinic AGaM′Q 4 -mP56 polymorphs. Like the case discussed above, the cubic network phase TlGaSnQ 4 -cP84 (16,17) can also reproducibly be prepared by annealing below the melting point. The layered monoclinic phase TlGaSnQ 4 -mP56 (9, 10) was obtained after (slow) cooling of the molten sample.…”

“…Further details on the crystal structure investigations may be obtained from the Fachinformationszentrum Karlsruhe, 76344 Eggenstein-Leopoldshafen, Germany, on quoting the depository numbers CSD-2018860 for RbGaGeS 4 (1), CSD-2018859 for RbGaGeSe 4 (2), CSD-2018866 for TlGaGeS 4 (3), CSD-2018863 for TlGaGeSe 4 -oP56 (4), CSD-2018857 for CsGaGeS 4 -oP56 (5), CSD-2018862 for CsGaGeSe 4 (6), CSD-2018854 for CsGaSnS 4 -oP56 (7), CSD-2018855 for KGaGeSe 4 (8), CSD-2018869 for TlGaSnS 4 -mP56 (9), CSD-2018867 for TlGaSnSe 4 -mP56 (10), CSD-2018861 for TlGaGeSe 4 -mC112 (11), CSD-2018853 for CsGaGeS 4 -mP28 (12), CSD-2018852 for CsGaGeS 4 -aP28 (13), CSD-2018856 for KGaSnSe 4 -cP84 (14), CSD-2018858 for RbGaSnSe 4 -cP84 (15), CSD-2018865 for TlGaSnS 4 -cP84 ( 16), CSD-2018868 for TlGaSnSe 4 -cP84 (17), and CSD-2018864 for CsGaSnS 4 -cP84 (18). All compounds presented in this work have mixed occupation of the Ga 3+ and M 4+ cations on all respective sites.…”

“…Materials like LiGaGe 2 Q 6 , − A 2 In 2 M ′ Q 6 , − and TlGaSn 2 Q 6 − are especially promising NLO candidates. For the compounds with the stoichiometric composition AMM ′ Q 4 ( A = K, Rb, Cs, Tl; M = Al; Ga, In; M ′ = Si; Ge, Sn; Q = S, Se), compounds containing indium and mixtures of gallium and tin have been mostly reported. − Among the respective gallium germanium compounds only KGaGeS 4 has been reported . The present work deals with the discovery, structural characterization, and optical properties of a series of new gallium compounds A Ga M ′ Q 4 ( A = K, Rb, Cs, Tl; M ′ = Ge, Sn; Q = S, Se).…”