Mg 2 X-based (X = Si, Ge, Sn) phases are promising for thermoelectric applications due to their nontoxicity, low cost, and high performance. Substantial experimental work has already been carried out based on the polycrystalline samples; however, studies on related single-crystal growth and corresponding properties are still very limited owing to the high volatility and reactivity of Mg, which makes it very challenging to obtain highquality single crystals with big sizes. In this report, for the first time, the Bridgman method was successfully applied in the single-crystal growth of the Bi-doped Mg 2 Sn materials. The crystals are of high quality and related anisotropic thermoelectric properties were systematically investigated. The Bi-doped Mg 2 Sn 0.99 Bi 0.01 single crystal exhibited a maximum zT value of 0.58 along the [111] orientation at 623 K, which is about 30 times that of the pristine Mg 2 Sn single crystal.