Solid state synthesis of nitride, carbide and boride nanocrystals in an autoclave

Abstract

This feature article provides a brief overview of the latest developments in the solid state synthesis of various nitride, carbide and boride nanocrystals in an autoclave at mild temperatures. An additive assisted route was developed for nitride, carbide and boride nanocrystals. In the presence of S powder, 3C-SiC nanocrystals were obtained utilizing waste plastics and Si powder at 350-500 C. With the assistance of I 2 , rare-earth and alkaline-earth hexaboride nanocrystals were prepared at temperatures below 400 C. As N-aminothiourea and iodine were added to the system containing Si and NaN 3 , b-Si 3 N 4 nanorods and a,b-Si 3 N 4 nanoparticles could be prepared at 60 C. A ternary nitride of MgSiN 2 can also be prepared at 350-500 C using Si, Mg, and NaN 3 as reactants.

High-temperature oxidation behaviour of Ti3Si(1−x)Al x C2 in air

“…EDS and EPMA results revealed the additive aluminum still exists in the matrix, though the loss of aluminum is much more than that of silicon at high temperature. The compound can be described by the formula, Ti 3 Si (1-x) Al x C 2 (0 < x < 0⋅16) (Zhu and Mei 2009). In the following study, the formula is abbreviated as TSAC.…”

Low temperature solid-state synthesis of nanocrystalline gallium nitride

“…Solid-state synthesis in a stainless steel autoclave is favorable for the synthesis of nitrides at relatively low temperatures. The synthesis temperature of nitrides is lower than the traditional solid-state thermal processes [12]. The approach to synthesize nitride in an autoclave could be exploited for practical industrial nitride production.…”

Additive-assisted synthesis of boride, carbide, and nitride micro/nanocrystals

“…Borides, carbides, and nitrides have received increasing attention due to their outstanding optical, electrical, thermal and mechanical properties [1][2][3][4]. These unique properties enable them to be used in many fields, such as abrasion-resistant coatings (TiN, TiC) [5], superconducting films (MgB 2 , NbB 2 ) [6], semiconductors (SiC) [7], light-and field-emitting devices (AlN, LaB 6 ) [8,9], catalysts (WC,VN) [10,11], lubricants (BN) [12][13][14], and high-temperature refractory ceramics (MgSiN 2 ) [15].…”