Abstract:Ge-doped tetrahedrites Cu12Sb4-yGeyS13 (y = 0.1–0.4) were prepared using mechanical alloying and hot pressing. An X-ray diffraction analysis after mechanical alloying showed a single tetrahedrite phase without secondary phases. The tetrahedrite phase was stable after hot pressing at 723 K under 70 MPa. As the Ge content increased, the lattice constant decreased from 1.0343 to 1.0334 nm, which confirms that Ge was successfully substituted at the Sb sites. Ge-doped tetrahedrites exhibited p-type semiconductor ch… Show more
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