Solid state synthesis and e-beam evaporation growth of Cu 2 ZnSnSe 4 for solar energy absorber applications

Tiwari, Kunal J.; Chetty, Raju; Mallik, Ramesh Chandra; Malar, P.

doi:10.1016/j.solener.2017.05.042

Cited by 29 publications

(7 citation statements)

References 35 publications

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“…To further verify whether other nanoscale secondary phases are present in the selenized A-1 and A-2 films, Raman measurements are performed on these thin films. As shown in Figure b, the Raman peaks of these thin films are observed at approximately 175, 200, and 240 cm –1 and attributed to the B, A, and E modes of CZTSe, respectively. − Additionally, a Raman peak observed at 255 cm –1 , attributed to ZnSe, is detected in the two thin films, indicating that the two CZTSe thin films are Cu-poor and Zn-rich. Moreover, the intensities of the XRD and Raman peaks in the selenized A-1 film are stronger than those in the selenized A-2 film (Figure ), indicating a better crystalline quality of the A-1 film.…”

Section: Resultsmentioning

confidence: 90%

Growth Mechanism and Properties of Nanostructure Cu₂ZnSnSe₄ Thin Films and Solar Cells

Wang,

Shen,

Liu

et al. 2023

ACS Appl. Nano Mater.

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The quality of the absorber layer is considerably important in thin-film solar cells. The precursor stacking with uniform distribution of metal elements is usually considered to be critical while preparing high-quality kesterite-structured thin-film solar cells. However, the Mo/Zn/Cu/Sn/Cu stacking order may be more reasonable after considering the growth mechanism of films. Herein, the growth mechanism and thus the solar cells prepared with these two stacking sequences Mo/Zn/Cu/Sn/Cu and Mo/Sn/Cu/Zn/Sn/Cu are studied in-depth. The crosssectional images reveal that the Cu 2 ZnSnSe 4 (CZTSe) film prepared with the precursor stacking order of Mo/Zn/Cu/Sn/ Cu shows large grains without nanoscale small grains at the bottom of the film, which is attributed to a top-to-bottom growth mechanism. However, the CZTSe film prepared with the precursor stacking order Mo/Sn/Cu/Zn/Sn/Cu has a bilayer structure. The crystallization of CZTSe at the top of the film is good, but its crystallization at the bottom of the film is poor because the SnSe 2 liquid phase that assists the growth of CZTSe grains is absent in the bottom layer. The difference in nanoscale morphology and the growth mechanism of CZTSe films is mainly due to the difference in the locations of Zn layers in the precursor films. Therefore, the best CZTSe solar cells have been fabricated with the selenized Mo/Zn/Cu/Sn/Cu films and exhibit an efficiency of 10.28%. Further development of a high-quality kesterite-structured thin film is expected based on the growth mechanism studied herein.

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Section: Resultsmentioning

confidence: 90%

Growth Mechanism and Properties of Nanostructure Cu₂ZnSnSe₄ Thin Films and Solar Cells

Wang,

Shen,

Liu

et al. 2023

ACS Appl. Nano Mater.

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“…Various electrochemical and fabrication strategies are currently being researched in order to achieve layer specifications similar to those in Table 2. There are current results that suggest that the Pulsed laser deposition [41], Spray pyrolysis [42], Vacuum deposition method [43,44], Magnetron sputtering [45], and sol-gel [46,47] methods could be of use for achieving two divided absorber layers like those simulated by the CSLO technique.…”

Section: Resultsmentioning

confidence: 99%

CZTSe-Based Solar Cell Performance Improvement Using the CSLO Technique

Rahimi

Shooshtari

2022

Applied Sciences

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Here we investigated a novel layer-based optimization technique to improve the performance of a CZTSe solar cell. By using this technique, the optical behavior and electrical properties of the proposed solar cell improved significantly as a result of the changes in the layer specifications and the layer materials. The structure of the cell consisted of an absorber laid on a conducting layer and covered by Indium Tin Oxide (ITO), with ZnO on its top surface. Due to the employment of the CSLO technique, a p+pn junction was formed between the absorber and window layers, which provided a lower recombination rate by transmitting more electrons and holes to the contacts. In addition, the main important parameters affecting the solar cell’s performance such as layer thickness, carrier lifetime, and total effect density were investigated. According to the results, the proposed CZTSe solar cell achieved a 32.6% and 79.5% efficiency and fill factor, respectively—which in comparison to a conventional solar cell is remarkable. Moreover, hybrid structures made by utilizing CZTS-based, Ge-based Cu2ZnGeSe4, and Si-based Cu2ZnSiSe4 with the proposed CZTSe-based solar cell were implemented and better results were achieved, yielding an efficiency of about 42, 50, and 34% and a fill factor of 66, 55, and 42%, respectively, due to the materials’ properties.

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“…Katagiri et al, [16] in Japan fabricated the CZTS thin film solar cells with the highest photoelectric conversion efficiency of 6.8% by vacuum sputtering. Moreover, Sun et al, [17] investigated that selenizing CZTS precursor prepared Cd-alloying CZTSSe (sulfur about 1%) film with CdS on the top and the highest efficiency of 11.2% for CZTSSe solar cells was achieved.…”

Section: Magnetron Sputtering Methodsmentioning

confidence: 99%

A Review of CZTS Thin Film Solar Cell Technology

Islam

Yatim

2021

ARFMTS

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Copper Zinc Tin Sulfide (CZTS) solar cells have recently attracted attention as a potential low-cost earth abundant replacement for CIGS cells. This is due to their constituent’s Zn and Sn are non-toxic and earth-abundant compare to the elements of In and Ga in CIGS. Thus, aiming to analyse solar cells free from the environmental contaminant, CZTS is viewed as a potential candidate as the absorber for the next generation thin film solar cells. However, the conversion efficiency of CZTS based solar cells reported which is relatively low (highest conversion efficiency recorded is 12.5%) from the theoretical conversion efficiency limit of 32.2%. This is due to the low fill factor (FF), open circuit voltage (Voc) and current density (Jsc). In this study analysis of the different CZTS based solar cells and its synthesis methods will be reviewed. The effect of the compositional change and various structure in the CZTS, different buffer layers with their interfaces are thoroughly studied. The challenges regarding improving the conversion efficiency of CZTS solar cells and their future in the thin film solar cell application are discussed.

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Solid state synthesis and e-beam evaporation growth of Cu 2 ZnSnSe 4 for solar energy absorber applications

Cited by 29 publications

References 35 publications

Growth Mechanism and Properties of Nanostructure Cu₂ZnSnSe₄ Thin Films and Solar Cells

Growth Mechanism and Properties of Nanostructure Cu₂ZnSnSe₄ Thin Films and Solar Cells

CZTSe-Based Solar Cell Performance Improvement Using the CSLO Technique

A Review of CZTS Thin Film Solar Cell Technology

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Solid state synthesis and e-beam evaporation growth of Cu 2 ZnSnSe 4 for solar energy absorber applications

Cited by 29 publications

References 35 publications

Growth Mechanism and Properties of Nanostructure Cu2ZnSnSe4 Thin Films and Solar Cells

Growth Mechanism and Properties of Nanostructure Cu2ZnSnSe4 Thin Films and Solar Cells

CZTSe-Based Solar Cell Performance Improvement Using the CSLO Technique

A Review of CZTS Thin Film Solar Cell Technology

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Product

Resources

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Growth Mechanism and Properties of Nanostructure Cu₂ZnSnSe₄ Thin Films and Solar Cells

Growth Mechanism and Properties of Nanostructure Cu₂ZnSnSe₄ Thin Films and Solar Cells