Electron-donating N-heterocyclic carbenes (Lewis
bases, LB) and electron-accepting Lewis acids (LA) have been used
in tandem to yield donor–acceptor complexes of inorganic tetrelenes
LB·EH2·LA (E = Si, Ge, and Sn). Herein, we introduce
the new germanium (II) dihydride adducts ImMe2·GeH2·BH3 (ImMe2 = (HCNMe)2C:) and ImiPr2Me2·GeH2·BH3 (ImiPr2Me2 =
(MeCNiPr)2C:), with the former complex containing
nearly 40 wt % germanium. The thermal release of bulk germanium from
ImMe2·GeH2·BH3 (and its
deuterated isotopologue ImMe2·GeD2·BD3) was examined in solution, and a combined kinetic and computational
investigation was undertaken to probe the mechanism by which Ge is
liberated. Moreover, the thermolysis of ImMe2·GeH2·BH3 in solution cleanly affords conformal
nanodimensional layers of germanium as thin films of variable thicknesses
(20–70 nm) on silicon wafers. We also conducted a computational
investigation into potential decomposition pathways for the germanium(II)-
and tin(II)-dihydride complexes NHC·EH2·BH3 (NHC = [(HCNR)2C:]; R = 2,6-iPr2C6H3 (Dipp), Me, and H; and E = Ge and
Sn). Overall, this study introduces a mild and convenient solution-only
protocol for the deposition of thin films of Ge, a widely used semiconductor
in materials research and industry.