Solid state recrystallization: a promising technique for the growth of semiconductor materials

Abstract

Experimental results related to the growth by solid state recrystallization of different semiconductors such as HgCdTe, HgMnTe, CdTe, ZnSe and ZnS are reported and reviewed. The importance of the initial texture and of the deviation from stoichiometry is stressed and the essential role of metal vacancies is emphasized.

Characterization of CdTe thin films fabricated by close spaced sublimation technique and a study of Cu doping by ion exchange process

“…It appears that annealing in the presence of Cu facilitates the grain growth in the CdTe films in such a way that some of the small grains coalesce together and reorient themselves, which decreases the number of grain boundaries. Grain growth in CdTe is well known and reported for a solid-state re-crystallization (SSR) method [25,26].…”

Properties of Te-rich cadmium telluride thin films fabricated by closed space sublimation technique

“…As a result an improved different microstructure and morphology is created. Grain growth in CdTe is well known and reported for a solid-state recrystallization (SSR) method [29,30].…”

Physical properties of Ag-doped cadmium telluride thin films fabricated by closed-space sublimation technique

“…As a result, an improved microstructure and morphology are created. Grain growth in CdTe is well known and reported for a solid-state recrystallization (SSR) method [23,24]. The Ag content after its deposition and annealing determined by EMPA is shown in Table 1.…”