1995
DOI: 10.1524/zpch.1995.190.part_2.253
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Solid State Reactions in the Quasiternary System (Cd, Pb) (S, Te)

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Cited by 13 publications
(9 citation statements)
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“…tice-type mismatch results in a large miscibility gap in the phase diagram [6] and leads to a strong phase separation [4,5]. Such a characteristic is similar to that of rs-ErAs/zb-GaAs heteroepitaxy [7].…”
mentioning
confidence: 83%
“…tice-type mismatch results in a large miscibility gap in the phase diagram [6] and leads to a strong phase separation [4,5]. Such a characteristic is similar to that of rs-ErAs/zb-GaAs heteroepitaxy [7].…”
mentioning
confidence: 83%
“…Crystals containing PbTe and CdTe, studied for many years, continue to be subjects of active research today. The phase diagram of this system demonstrated strong temperature-dependent CdTe solubility in PbTe. The low solubility results from the differences in the crystal structure of these compounds. PbTe crystallizes in the fcc rock-salt-type structure (space group Fm 3̅ m ), whereas CdTe crystallizes in the zinc blende-type structure.…”
Section: Introductionmentioning
confidence: 96%
“…Experimental studies of electric, thermoelectric, and thermal properties of this material revealed that, in n-(Pb,Cd)Te samples heavily doped with iodine to an electron concentration of about n ≈ 10 19 cm –3 , ZT approaches 1.2 at T = 720 K. A high-resolution structural analysis of this material showed that it consists of CdTe nanograins embedded in a (Pb,Cd)Te polycrystalline matrix . The spontaneous formation of these CdTe nanoprecipitations is related to the very low solubility of CdTe in PbTe, as discussed below . The relatively high value of the parameter ZT observed in these (Pb,Cd)Te samples is due to their low lattice thermal conductivity related to the presence of the CdTe nanograins.…”
mentioning
confidence: 90%
“…We applied a two-stage technological method that involves the molecular beam epitaxy (MBE) growth of a properly designed CdTe/PbTe epitaxial multilayer, followed by a nanostructure-forming in situ high-vacuum annealing procedure. This method exploits the almost complete immiscibility of PbTe and CdTe below a temperature of about 300 °C, which is related to the qualitative differences in chemical bonding and crystal structure of these semiconductor materials. , Even though these compounds crystallize in different cubic lattices, they exhibit excellent matching of their lattice parameters: the zinc-blende lattice parameter of CdTe is a 0 = 0.648 nm, whereas the rock-salt lattice parameter of PbTe is a 0 = 0.646 nm. Thus, using this semiconductor heterosystem, it is possible to obtain stress-free thermoelectric devices.…”
mentioning
confidence: 99%