Solid State Reaction of Mo on Cubic and Hexagonal SiC

Hara, Shiro; Suzuki, Ken; Furuya, Akira; Matsui, Youichi; Ueno, Tomo; Ohdomari, Iwao; Misawa, S.; Sakuma, E.; Yoshida, Sadafumi; Ueda, Yoshiya; Suzuki, Setsu

doi:10.1143/jjap.29.l394

Cited by 20 publications

(3 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…14 Penner has used electrochemical deposition to make nanowires at stepped edges on highly ordered pyrolytic graphite ͑HOPG͒ surfaces, [15][16][17][18] and Hara has used electrodeposition to make nanowires on a Si͑111͒ surface. 19 The nanowires were produced by first applying a very negative potential spike which resulted in nucleation along the step edge and then reducing the potential to allow for slow growth of the nuclei.…”

mentioning

confidence: 99%

Simulation of Kinetically Limited Nucleation and Growth at Monatomic Step Edges

Stephens

Alkire

2007

J. Electrochem. Soc.

View full text Add to dashboard Cite

A kinetic Monte Carlo ͑KMC͒ numerical approach was used to investigate initial stages of kinetically controlled nucleation and growth on electrodes. Deposition, surface diffusion, nucleation, and growth were simulated for a pristine system consisting of metal ions in solution adjacent to a face-centered-cubic ͑fcc͒ surface that is initially configured with a series of parallel, monatomic step edges. Simulations were carried out with an atomic-scale, solid-on-solid KMC algorithm, in which the deposited atoms occupied the sites of a fcc lattice. One series of simulations was carried out for metal deposition onto a substrate of the same metal. The results were characterized according to a dimensionless quantity, ⌳, that represented the ratio of the rate of surface diffusion to the rate of deposition. It was found for large values of ⌳ that the deposit grew at the monatomic step edges, whereas for small values of ⌳ the step edges played no role in the nucleation of islands. A second series of simulations was carried out for deposition onto a foreign substrate. The growth modes associated with various combinations of system parameters was explored.Electrochemical deposition of metal in small-scale surface features, an established technology for on-chip interconnects used by semiconductor devices, may also be of growing importance for novel applications associated with nanotechnology. As the discovery of new molecular-scale structures moves toward technological applications, the ability to produce well-engineered products will depend on having precise quantitative understanding of the small-scale phenomena that affect the quality control of each step of the manufacturing processes. Therefore, interest arises in using stochastic methods to simulate electrodeposition events at the small scale to augment traditional engineering methods which are based on continuum approaches. The present work uses a kinetic Monte Carlo ͑KMC͒ method to simulate the first stages of nucleation and growth at defect sites ͑monatomic step edges͒ on otherwise pristine metal electrodes.The experimental electrodeposition literature is extensive and has led to numerous theoretical treatments of electrocrystallization phenomena. 1-3 In these, models for the electrode kinetics have been proposed to describe bulk metal growth, and atomistic approaches have been taken by formulating rate expressions for the attachment and detachment of single atoms to the electrode surface. Attachment rate expressions have been accompanied by surface diffusion models, which take into account the surface energetic parameters which govern the movement of adatoms on the electrode surface. The attachment/detachment kinetics, combined with thermodynamic considerations, have been used to develop theoretical predictions of nucleation rate. In addition, the effect of solution-phase mass transport limitations on nucleation kinetics has been investigated. 4 The theory of metal growth on crystalline faces has been developed for many cases among which are two-dimensional ͑2-D͒ and...

show abstract

mentioning

confidence: 99%

Simulation of Kinetically Limited Nucleation and Growth at Monatomic Step Edges

Stephens

Alkire

2007

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…An atomically flat Si(111) surface with a step-terrace structure, which can be easily obtained by wet etching, 1) has been considered as one of the prospective templates for nanoscale assembly, since atomic steps are chemically much more reactive than terraces. [2][3][4] We have reported that atomic metal wires could be fabricated along step edges by the wet process. [5][6][7] To obtain well-controlled nanostructures, however, some advanced methods of template preparation with a given step structure are required.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching

Hasunuma

Yamabe

2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The rate of kink generation in ultralow dissolved-oxygen water (LOW) at a <112̄> oriented atomic step on a Si(111) surface was experimentally determined. By controlling the step length by adding SiO2 line patterns that prevent kink propagation across the patterns, it was found that step flow velocity was proportional to step length when the step was short. From the proportionality coefficient, the rate of kink generation was evaluated to be 800 cm-1 s-1. Furthermore, the velocity of kink propagation along a step was also evaluated as 40 nm/s.

show abstract

“…Cu and Ni nanowires have been formed by controlling the Si potential with application of external biases (electrodeposition). 2,3) However, electrodeposited nanowires are too wide to be adopted for the nanodevices with atomically controlled nanostructures.…”

mentioning

confidence: 99%

Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water

Tokuda

Nishizawa

Miki

et al. 2005

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We have fabricated high-aspect-ratio monoatomic Cu rows along atomic step edges on vicinal Si(111) substrates. The method consists of two wet processes: (1) the formation of a step/terrace structure by immersing a Si(111) substrate in ultralow-dissolved-oxygen water (LOW) and (2) the formation of the nanowires by immersion in LOW containing Cu ions. A systematic investigation of Si(111) surfaces with the nanowire has been performed by means of atomic force microscopy, Fourier-transform infrared absorption spectroscopy, and total-reflection X-ray fluorescence spectroscopy.

show abstract

Solid State Reaction of Mo on Cubic and Hexagonal SiC

Cited by 20 publications

References 13 publications

Simulation of Kinetically Limited Nucleation and Growth at Monatomic Step Edges

Simulation of Kinetically Limited Nucleation and Growth at Monatomic Step Edges

Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching

Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water

Contact Info

Product

Resources

About