Solid state quantum computer development in silicon with single ion implantation

Schenkel, T.; Persaud, A.; Park, S. J.; Nilsson, Joakim; Bokor, Jeffrey; Liddle, J. Alexander; Keller, R.; Schneider, Dieter; Cheng, Donald; Humphries, D.

doi:10.1063/1.1622109

Cited by 96 publications

(73 citation statements)

References 41 publications

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“…are required for a universal QC, involve precise control over electron-electron exchange (Loss and DiVincenzo 1998, Kane 1998, Vrijen et al 2000, Hu and Das Sarma 2000. Such control can presumably be achieved by fabrication of donor arrays with well-controlled positioning and surface gate potential (O'Brien et al 2001, Schofield et al 2003, Buehler et al 2002, Schenkel et al 2003. However, electron exchange in bulk silicon has spatial oscillations (Andres et al 1981, Koiller et al 2002 on the atomic scale due to valley interference arising from the particular six-fold degeneracy of the bulk Si conduction band.…”

Section: Electric-field Control Of Shallow Donor In Siliconmentioning

confidence: 99%

Silicon-based spin and charge quantum computation

Koiller

Capaz

et al. 2005

An. Acad. Bras. Ciênc.

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Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals due to the relatively long spin coherence times. For these spin qubits, donor electron charge manipulation by external gates is a key ingredient for control and read-out of single-qubit operations, while shallow donor exchange gates are frequently invoked to perform two-qubit operations. More recently, charge qubits based on tunnel coupling in P + 2 substitutional molecular ions in Si have also been proposed. We discuss the feasibility of the building blocks involved in shallow donor quantum computation in silicon, taking into account the peculiarities of silicon electronic structure, in particular the six degenerate states at the conduction band edge. We show that quantum interference among these states does not significantly affect operations involving a single donor, but leads to fast oscillations in electron exchange coupling and on tunnel-coupling strength when the donor pair relative position is changed on a lattice-parameter scale. These studies illustrate the considerable potential as well as the tremendous challenges posed by donor spin and charge as candidates for qubits in silicon.Key words: semiconductors, quantum computation, nanoelectronic devices, spintronics, nanofabrication, donors in silicon.

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Section: Electric-field Control Of Shallow Donor In Siliconmentioning

confidence: 99%

Silicon-based spin and charge quantum computation

Koiller

Capaz

et al. 2005

An. Acad. Bras. Ciênc.

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“…To implement the above idea, single ion implantation with nanometer accuracy is required. We want to note here that the CNT nanopore sample prepared above can be used as a nano-aperture for single ion implantation [30][31], or as a channeling device for charged particles [32].…”

Section: Fib Fabrication Of Cnt Nanoaperture/nanoporementioning

confidence: 99%

Focused Ion Beam Fabrication of Individual Carbon Nanotube Devices

Chow

Chai

2007

MRS Proc.

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Focused ion beam (FIB) techniques have found many applications in nanoscience and nanotechnology applications in recent years. However, not much work has been done using FIB to fabricate carbon nanotube devices. This is mainly due to the fact that carbon nanotubes are very fragile and energetic ion beam from FIB can easily damage the carbon nanotubes. Here we report the fabrication of carbon nanotube (CNT) devices, including electron field emitters, atomic force microscope tips, and nano-pores for biomedical applications. This is made possible by a unique, coaxial configuration consisting of a CNT embedded in a graphitic carbon coating, which was developed by us for FIB processing of carbon nanotubes. The CNT-based atomic force microscope tip has been demonstrated. The electron field emission from the tip and the side wall of CNT will be discussed. We will also report the fabrication of a multiwall carbon nanotube nanopore for future applications.

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“…Single ion detection can be achieved by detection of secondary electrons from single ion impacts [10,19,6], or through collection of electron-hole pairs formed by implanted ions inside the solid [20,21]. Single ion signals in both secondary electron emission, and excitation in the solid are very strongly enhanced for highly charged dopant ions [10,19,22].…”

Section: Figurementioning

confidence: 99%

“…This enables us also to align the implantation or patterning spot with the scanned region by placing the tip at a precise location. Holes in tips with diameters as small as 5 nm have been formed by focused ion beam drilling of a few hundred nm wide holes, followed by hole closing via local thin film deposition [9], and ion beam transport has been characterized for 30 nm diameter holes in nickel foils [10].…”

mentioning

confidence: 99%

Integration of Scanning Probes and Ion Beams

et al. 2005

Self Cite

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We report the integration of a scanning force microscope with ion beams. The scanning probe images surface structures non-invasively and aligns the ion beam to regions of interest. The ion beam is transported through a hole in the scanning probe tip. Piezoresistive force sensors allow placement of micromachined cantilevers close to the ion beam lens. Scanning probe imaging and alignment is demonstrated in a vacuum chamber coupled to the ion beam line. Dot arrays are formed by ion implantation in resist layers on silicon samples with dot diameters limited by the hole size in the probe tips of a few hundred nm.

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Solid state quantum computer development in silicon with single ion implantation

Cited by 96 publications

References 41 publications

Silicon-based spin and charge quantum computation

Silicon-based spin and charge quantum computation

Focused Ion Beam Fabrication of Individual Carbon Nanotube Devices

Integration of Scanning Probes and Ion Beams

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