“…The relative contribution of molecularly ordered and disordered regions to transport is manipulated using different thermal treatments, resulting in different degrees of energetic disorder within FETs and thus in a strong modulation of the thermal barriers to electron transport. A transport improvement with lamellar thickening, obtained upon annealing at T2, is generally expected in semicrystalline polymers, 62 but it has been rarely demonstrated, 63,64 especially in solution processed films and FET architectures. Owing to the retention of backbone orientation upon annealing at T2, energetic barriers for charge transfer are strongly reduced exclusively in the direction of chain alignment, where effective interconnectivity of ordered regions can be more easily gained, leading to temperature-independent electron transport near to 300 K. In contrast, in the direction perpendicular to the backbone, thermal charge transport barriers are independent whether the material is annealed at T1 or T2, which is not surprising as in the -stacking direction coherence length is much smaller in any case.…”